Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices von Kim, Cheolkyu, Kang, Dongmin, Lee, Tae-Yon, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Junho, Nam, Sung-Wook, Kim, Ki-Bum, Khang, Yoonho

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Large Scale Assembly of Pristine Semiconducting Carbon Nanotube Network-Based Devices Exhibiting Intrinsic Characteristics von Kim, Jeongsu, Hong, Daniel, Lee, Hyungwoo, Shin, Youngki, Park, Sangho, Khang, Yoonho, Lee, Minbaek, Hong, S

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Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices von Suh, Dong-Seok, Kim, Cheolkyu, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Park, Tae Sang, Yoon, Young-Gui, Im, Jino, Ihm, Jisoon

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Fullerene thermal insulation for phase change memory von Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Tae-Yon, Khang, Yoonho, Cahill, David G.

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Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices von Lee, Tae-Yon, Kim, Kijoon H. P., Suh, Dong-Seok, Kim, Cheolkyu, Kang, Youn-Seon, Cahill, David G., Lee, Dongbok, Lee, Min-Hyun, Kwon, Min-Ho, Kim, Ki-Bum, Khang, Yoonho

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Rapid crystallization of GeTe–Bi2Te3 mixed layer von Lee, Tae-Yon, Kim, Cheolkyu, Kang, Younseon, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

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Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys von Shin, H. J., Kang, Youn-Seon, Benayad, Anass, Kim, Ki-Hong, Lee, Y. M., Jung, M.-C., Lee, Tae-Yon, Suh, Dong-Seok, Kim, Kijoon H. P., Kim, CheolKyu, Khang, Yoonho

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Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device von Eom, Jae-Hyeon, Yoon, Young-Gui, Park, Changwon, Lee, Hoonkyung, Im, Jino, Suh, Dong-Seok, Noh, Jin-Seo, Khang, Yoonho, Ihm, Jisoon

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Electronic structure of ( Ge 2 Sb 2 Te 5 ) 1 − x ( In 3 SbTe 2 ) x investigated by x-ray photoelectron spectroscopy von Benayad, Anass, Kang, YounSeon, Shin, Hyun-Joon, Kim, Kihong, Suh, Dong-Seok, Kim, KiJoon, Kim, CheolKyu, Lee, Tae-Yon, Noh, Jin-Seo, Lee, JaeCheol, Khang, YoonHo

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Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation von Khang, Yoonho, Lee, Joohyun

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Valence band structures of the phase change material Ge2Sb2Te5 von Lee, Dohyun, Lee, Sang Sun, Kim, Wondong, Hwang, Chanyong, Hossain, M. B., Hung, Ngyuen Le, Kim, Hyojin, Kim, C. G., Lee, Hangil, Hwang, Han Na, Hwang, Chan-Cuk, Lee, Tae-Yon, Kang, Younseon, Kim, Cheolkyu, Suh, Dong-Seok, Kim, Kijoon H. P., Khang, Yoonho

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Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing von Nam, Sung-Wook, Kim, Cheolkyu, Kwon, Min-Ho, Lee, Hyo-Sung, Wi, Jung-Sub, Lee, Dongbok, Lee, Tae-Yon, Khang, Yoonho, Kim, Ki-Bum

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Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios von Kim, Ji-Hwan, Park, Eung-Kyu, Kim, Min Su, Cho, Hyeong Jun, Lee, Dong-Hoon, Kim, Jin-Ho, Khang, Yoonho, Park, KeeChan, Kim, Yong-Sang

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD von KHANG, Yoonho

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD, USING LASER COMBINATION HAVING SINGLE WAVELENGTH von KHANG, Yoonho

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD von KHANG, Yoonho

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD, USING LASER COMBINATION HAVING SINGLE WAVELENGTH von KHANG, Yoonho

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD, USING LASER COMBINATION HAVING SINGLE WAVELENGTH von KHANG, Yoonho

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PHOTOACOUSTIC DIAGNOSTIC DEVICE AND METHOD von KHANG, Yoonho

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Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements von Khang, Yoonho, Park, Yeonjoon, Salmeron, Miquel, Weber, Eicke R.

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