Design of High-Order Switches for Multimode Applications on a Silicon-on-Insulator Technology von Tombak, Ali, Carroll, Michael S., Kerr, Daniel C., Pierres, Jean-Blaise, Spears, Edward

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A New Method to Recover Vectorial Electric Fields andCurrent Densities from Unstructured Meshes von Kerr, Daniel C., Mayergoyz, Isaak D.

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3‐D Device Simulation Using IntelligentSolution Method Control von Kerr, Daniel C., Mayergoyz, Isaak D.

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Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer von Kerr, Daniel C., Gering, Joseph M., McKay, Thomas G., Carroll, Michael S., Roda Neve, C., Raskin, Jean-Pierre

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Three‐Dimensional Hydrodynamic Modelingof MOSFET Devices von Kerr, Daniel C., Goldsman, Neil, Mayergoyz, Isaak D.

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Hydrodynamic Device Simulationwith New State Variables Specially Chosen fora Block Gummel Iterative Approach von Liang, Wenchao, Kerr, Daniel C., Goldsman, Neil, Mayergoyz, Isaak D.

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Bipolar device having buried contacts von ROSSI NACE M, DYSON MARK, KERR DANIEL C

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BIPOLAR DEVICE HAVING BURIED CONTACTS von ROSSI NACE M, DYSON MARK, KERR DANIEL C

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Bipolar device having buried contacts von ROSSI NACE M, DYSON MARK, KERR DANIEL C

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Bipolar device having buried contacts von Dyson, Mark, Kerr, Daniel C, Rossi, Nace M

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Method of improving silicide sheet resistance by implanting fluorine von KERR, DANIEL C

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Bipolar device having improved capacitance von ROSSI NACE M, DYSON MARK, CHEN ALAN S, KERR DANIEL C

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Bipolar device having improved capacitance von Chen, Alan S, Dyson, Mark, Kerr, Daniel C, Rossi, Nace M

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BIPOLAR DEVICE HAVING BURIED CONTACTS von ROSSI NACE M, DYSON MARK, KERR DANIEL C

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Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to m... von KERR, DANIEL C, BULUCEA, CONSTANTIN

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BIPOLAR DEVICE HAVING IMPROVED CAPACITANCE von ROSSI NACE M, DYSON MARK, CHEN ALAN S, KERR DANIEL C

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Bipolar device having improved capacitance von ROSSI NACE M, DYSON MARK, CHEN ALAN S, KERR DANIEL C

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Bipolar device having improved capacitance von Chen, Alan S, Dyson, Mark, Kerr, Daniel C, Rossi, Nace M

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Method to improve performance of a bipolar device using an amorphizing implant von ROSSI NACE M, DYSON MARK, CHEN ALAN S, KERR DANIEL C

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Method to improve performance of a bipolar device using an amorphizing implant von Chen, Alan S, Dyson, Mark, Kerr, Daniel C, Rossi, Nace M

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