Strain Enhanced nMOS Using In Situ Doped Embedded Si1-xCx S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process von VERHEYEN, Peter, MACHKAOUTSAN, Vladimir, ABSIL, Philippe, BIESEMANS, Serge, THOMAS, Shawn G, BAUER, Matthias, WEEKS, Doran, KEMER, Christoph, CLEMENTE, Francesca, BENDER, Hugo, SHAMIRYAN, Denis, LOO, Roger, HOFFMANN, Thomas

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