Considerations for Ultimate CMOS Scaling von Kuhn, K. J.

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Scaling Limits of Electrostatic Nanorelays von Pawashe, Chytra, Lin, Kevin, Kuhn, Kelin J.

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Process Technology Variation von Kuhn, K. J., Giles, M. D., Becher, D., Kolar, P., Kornfeld, A., Kotlyar, R., Ma, S. T., Maheshwari, A., Mudanai, S.

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Moore’s crystal ball: Device physics and technology past the 15 nm generation von Kuhn, Kelin J.

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Improved MOSFET characterization technique for single channel length, scaled transistors von Ferdousi, Fahmida, Rios, Rafael, Kuhn, Kelin J.

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First principles modeling of defects in the Al2O3/In0.53Ga0.47As system von Greene-Diniz, Gabriel, Kuhn, Kelin J., Hurley, Paul K., Greer, James C.

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(Invited) Past, Present and Future: SiGe and CMOS Transistor Scaling von Kuhn, Kelin J., Murthy, Anand, Kotlyar, Roza, Kuhn, Markus

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CMOS transistor scaling past 32nm and implications on variation von Kuhn, Kelin J

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Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions von Monaghan, Scott, O'Connor, Eamon, Rios, Rafael, Ferdousi, Fahmida, Floyd, Liam, Ryan, Eimear, Cherkaoui, Karim, Povey, Ian M., Kuhn, Kelin J., Hurley, Paul K.

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Adhesion Limits and Design Criteria for Nanorelays von Lin, Kevin L., Cross, Graham L. W., Gleeson, Peter, de Silva, Johann P., Levander, Alejandro, Munoz, Jorge A., Pawashe, Chytra, Potie, Alexis, Theofanis, Patrick, Boland, John J., Kuhn, Kelin J.

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First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors von Ansari, Lida, Feldman, Baruch, Fagas, Giorgos, Martinez Lacambra, Carlos, Haverty, Michael G., Kuhn, Kelin J., Shankar, Sadasivan, Greer, James C.

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Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors von Monaghan, Scott, O'Connor, Éamon, Povey, Ian M., Sheehan, Brendan J., Cherkaoui, Karim, Hutchinson, Barry J. A., Hurley, Paul K., Ferdousi, Fahmida, Rios, Rafael, Kuhn, Kelin J., Rahman, Anisur

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Compressive Uniaxial Stress Bandstructure Engineering for Transferred-Hole Devices von Kotlyar, Roza, Giles, Martin D, Mudanai, Sivakumar P, Kuhn, Kelin J, Cea, Stephen M, Linton, Thomas D, Pillarisetty, Ravi

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The Magic of MOSFET Manufacturing

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Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS von Kuhn, K.J.

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Moore’s crystal ball: Device physics and technology past the 15nm generation von Kuhn, Kelin J.

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Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells von KUHN, K. J, IYENGAR, G. U, YEE, S

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Technology options for 22nm and beyond von Kuhn, Kelin J, Liu, Mark Y, Kennel, Harold

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CMOS scaling beyond 32nm: challenges and opportunities von Kuhn, Kelin J.

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Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFETs von Zurek, S.J., Darling, R.B., Kuhn, K.J., Foisy, M.C.

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