Reevaluating the incidence of pervasive developmental disorders: Impact of elevated rates of detection through implementation of an integrated system of screening in Toyota, Japan von Kawamura, Yuichi, Takahashi, Osamu, Ishii, Takashi

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The histone H3K36 demethylase Fbxl11 plays pivotal roles in the development of retinal late‐born cell types von Iwagawa, Toshiro, Fukushima, Masaya, Takeuchi, Shigeru, Kawamura, Yuichi, Aihara, Yuko, Ozawa, Manabu, Yakushiji‐Kaminatsui, Nayuta, Aihara, Makoto, Koseki, Haruhiko, Suzuki, Yutaka, Watanabe, Sumiko

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The role of Zhx2 transcription factor in bipolar cell differentiation during mouse retinal development von Kawamura, Yuichi, Yamanaka, Kyohei, Poh, Boonmin, Kuribayashi, Hiroshi, Koso, Hideto, Watanabe, Sumiko

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Effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well by Shubnikov-de Haas oscillations von Kawamata, Shuichi, Hibino, Akira, Tanaka, Sho, Kawamura, Yuichi

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In vivo imaging of a cone mosaic in a patient with achromatopsia associated with a GNAT2 variant von Ueno, Shinji, Nakanishi, Ayami, Kominami, Taro, Ito, Yasuki, Hayashi, Takaaki, Yoshitake, Kazutoshi, Kawamura, Yuichi, Tsunoda, Kazushige, Iwata, Takeshi, Terasaki, Hiroko

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Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation von Inoue, Naohisa, Kawamura, Yuichi

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2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates von Kawamura, Yuichi, Sahashi, Toru

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Direct estimation of near-surface damping based on normalized energy density von Goto, Hiroyuki, Kawamura, Yuichi, Sawada, Sumio, Akazawa, Takashi

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Behavior of nitrogen in Si crystal during irradiation and post-annealing von Inoue Naohisa, Oyama Hidenori, Watanabe, Kaori, Seki Hirofumi, Kawamura Yuichi

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Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates von Kawamura, Yuichi

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Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates von Kawamura, Yuichi, Shono, Takuya

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Natural-Laminar-Flow Airfoil Development for a Lightweight Business Jet von Fujino, Michimasa, Yoshizaki, Yuichi, Kawamura, Yuichi

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Effect of Sb Incorporation on Electroluminescence of InGaAsSbN Quantum Well Diodes Grown on GaAs Substrates von Kawamura, Yuichi, Nishino, Masatsugu

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Parafoveal Photoreceptor Abnormalities in Asymptomatic Patients With RP1L1 Mutations in Families With Occult Macular Dystrophy von Kato, Yu, Hanazono, Gen, Fujinami, Kaoru, Hatase, Tetsuhisa, Kawamura, Yuichi, Iwata, Takeshi, Miyake, Yozo, Tsunoda, Kazushige

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2.86 mu m room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates von Kawamura, Yuichi, Sahashi, Toru

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Wave-Drag Characteristics of an Over-the-Wing Nacelle Business-Jet Configuration von Fujino, Michimasa, Kawamura, Yuichi

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Novel RP1L1 Variants and Genotype-Photoreceptor Microstructural Phenotype Associations in Cohort of Japanese Patients With Occult Macular Dystrophy von Fujinami, Kaoru, Kameya, Shuhei, Kikuchi, Sachiko, Ueno, Shinji, Kondo, Mineo, Hayashi, Takaaki, Shinoda, Kei, Machida, Shigeki, Kuniyoshi, Kazuki, Kawamura, Yuichi, Akahori, Masakazu, Yoshitake, Kazutoshi, Katagiri, Satoshi, Nakanishi, Ayami, Sakuramoto, Hiroyuki, Ozawa, Yoko, Tsubota, Kazuo, Yamaki, Kunihiko, Mizota, Atsushi, Terasaki, Hiroko, Miyake, Yozo, Iwata, Takeshi, Tsunoda, Kazushige

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InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region von Kawamura, Yuichi

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Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates von Kawamura, Yuichi, Nakagawa, Tomokatsu, Inoue, Naohisa

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Annealing effect on effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well von Kawamata, Shuichi, Tanaka, Sho, Hibino, Akira, Kawamura, Yuichi

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