Mechanism of indium tin oxide//indium tin oxide direct wafer bonding von Hönle, Michael, Oberhumer, Peter, Hingerl, Kurt, Wagner, Thorsten, Huppmann, Sophia, Katz, Simeon

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Analysis and in situ observation of humidity dependent atomic layer deposited-Al2O3 degradation von Rückerl, Andreas, Huppmann, Sophia, Mandl, Martin, Katz, Simeon, Zeisel, Roland

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Method for manufacturing an optoelectronic light emitting device von Katz, Simeon

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Injectorless quantum cascade lasers von Katz, Simeon, Vizbaras, Augustinas, Meyer, Ralf, Amann, Markus-Christian

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Broad gain bandwidth injectorless quantum-cascade laserswith a step well design von Li, H., Katz, Simeon, Boehm, Gerhard, Amann, Markus-Christian

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High-performance injectorless quantum cascade lasers emitting below 6 μm von Katz, Simeon, Vizbaras, Augustinas, Boehm, Gerhard, Amann, Markus-Christian

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Broad gain bandwidth injectorless quantum-cascade lasers with a step well design von Li, H., Katz, Simeon, Boehm, Gerhard, Amann, Markus-Christian

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Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections von Adams, Robert W., Vizbaras, Augustinas, Jang, Min, Grasse, Christian, Katz, Simeon, Boehm, Gerhard, Amann, Markus C., Belkin, Mikhail A.

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Method for Manufacturing an Optoelectronic Light Emitting Device von Katz, Simeon

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Method for Producing a Radiation-Emitting Semiconductor Device and Radiation-Emitting Semiconductor Device von Katz, Simeon

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High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 \mu m With 2-W Peak Pulsed Power per Facet at Room Temperature von Li, H, Katz, S, Vizbaras, A, Boehm, G, Amann, M

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Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 µm von Katz, Simeon, Vizbaras, Augustinas, Boehm, Gerhard, Amann, Markus-Christian

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Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 μm: From heterostructures to nanostructures von KATZ, Simeon, VIZBARAS, Augustinas, BOEHM, Gerhard, AMANN, Markus-Christian

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High-performance injectorless quantum cascade lasers emittingbelow 6   μ m von Katz, Simeon, Vizbaras, Augustinas, Boehm, Gerhard, Amann, Markus-Christian

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Method for transferring missing semiconductor chips using an adhesive stamp von Weimar, Andreas, Katz, Simeon

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Continuous wave operation of injectorless quantum cascade lasers at low temperatures von Katz, Simeon, Friedrich, Andrea, Boehm, Gerhard, Amann, Markus-Christian

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High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 [Formula Omitted]m With 2-W Peak Pulsed Power per Facet at Room Temperature von Li, H, Katz, Simeon, Vizbaras, Augustinas, Boehm, Gehard, Amann, Markus-Christian

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Al(In)As–(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers von Boehm, Gerhard, Katz, Simeon, Meyer, Ralf, Amann, Markus-Christian

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Continuous wave operation of injectorless quantum cascade lasersat low temperatures von Katz, Simeon, Friedrich, Andrea, Boehm, Gerhard, Amann, Markus-Christian

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Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation von Grasse, Christian, Katz, Simeon, Böhm, Gerhard, Vizbaras, Augustinas, Meyer, Ralf, Amann, Markus-Christian

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