Photonic crystal nanocavity based on a topological corner state von Ota, Yasutomo, Liu, Feng, Katsumi, Ryota, Watanabe, Katsuyuki, Wakabayashi, Katsunori, Arakawa, Yasuhiko, Iwamoto, Satoshi

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Topological photonic crystal nanocavity laser von Ota, Yasutomo, Katsumi, Ryota, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001) von Kwoen, Jinkwan, Jang, Bongyong, Lee, Joohang, Kageyama, Takeo, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Direct Observation of Two-Step Photon Absorption in an InAs/GaAs Single Quantum Dot for the Operation of Intermediate-Band Solar Cells von Nozawa, Tomohiro, Takagi, Hiroyuki, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer von Kwoen, Jinkwan, Lee, Joohang, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Nanocavity-based self-frequency conversion laser von Ota, Yasutomo, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Flexible thin-film InAs/GaAs quantum dot solar cells von Tanabe, Katsuaki, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Fabrication of three-dimensional photonic crystals for near-infrared light by micro-manipulation technique under optical microscope observation von Takahashi, Shun, Kimura, Erika, Ishida, Takeshi, Tajiri, Takeyoshi, Watanabe, Katsuyuki, Yamashita, Kenichi, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Single Plasmon Generation in an InAs/GaAs Quantum Dot in a Transfer-Printed Plasmonic Microring Resonator von Tamada, Akihito, Ota, Yasutomo, Kuruma, Kazuhiro, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Self-frequency summing in quantum dot photonic crystal nanocavity lasers von Ota, Yasutomo, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Advanced Photonic Crystal Nanocavity Quantum Dot Lasers von OTA, Yasutomo, WATANABE, Katsuyuki, KAKUDA, Masahiro, IWAMOTO, Satoshi, ARAKAWA, Yasuhiko

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III-V/Si hybrid photonic devices by direct fusion bonding von Tanabe, Katsuaki, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells von Yoshikawa, Hirofumi, Watanabe, Katsuyuki, Kotani, Teruhisa, Izumi, Makoto, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Demonstration of lasing oscillation in a plasmonic microring resonator containing quantum dots fabricated by transfer printing von Tamada, Akihito, Ota, Yasutomo, Kuruma, Kazuhiro, Ho, Jinfa, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Thresholdless quantum dot nanolaser von Ota, Yasutomo, Kakuda, Masahiro, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique von Kwoen, Jinkwan, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001) von Kwoen, Jinkwan, Jang, Bongyong, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Coherently driven semiconductor quantum dot at a telecommunication wavelength von Takagi, Hiroyuki, Nakaoka, Toshihiro, Watanabe, Katsuyuki, Kumagai, Naoto, Arakawa, Yasuhiko

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High-Temperature 1.3 µm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding von Tanabe, Katsuaki, Rae, Timothy, Watanabe, Katsuyuki, Arakawa, Yasuhiko

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Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source von Ohkouchi, Shunsuke, Kumagai, Naoto, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

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