Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals von Taniguchi, Chisato, Ichimura, Aiko, Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Yano, Takayuki

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Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface von Tabuchi, Yuki, Ashida, Koji, Sonoda, Masashi, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules von Yamaguchi, Tomoki, Ohtomo, Kohei, Sato, Shunsuke, Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Yano, Takayuki

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Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth von Ohtomo, Kohei, Matsumoto, Nana, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

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Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals von Ohtani, Noboru, Ohshige, Chikashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Ohashi, Wataru, Yano, Takayuki, Matsuhata, Hirofumi, Kitabatake, Makoto

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Investigation of the surface morphology and stacking fault nucleation on the (000-1)C facet of heavily nitrogen-doped 4H-SiC boules von Ohtomo, Kohei, Matsumoto, Nana, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

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SEM and ECC imaging study of step-bunched structure on 4H-SiC epitaxial layers von Tabuchi, Yuki, Sonoda, Masashi, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

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Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate von Ushio, Shoji, Fujimoto, Tatsuo, Tani, Komomo, Katsuno, Masakazu, Sato, Shinya, Hirano, Hosei, Tsuge, Hiroshi, Yano, Takayuki

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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals von Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Growth of large high-quality SiC single crystals von Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu

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Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions von Takahashi, Jun, Ohtani, Noboru, Katsuno, Masakazu, Shinoyama, Seiji

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Satoh, S., Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals von Nakabayashi, Masashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Ohtani, Noboru

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Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Hoshino, Taizo, Aigo, Takashi, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Dislocation processes during SiC bulk crystal growth von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation von Katsuno, Masakazu, Ohtani, Noboru, Takahashi, Jun, Yashiro, Hirokatsu, Kanaya, Masatoshi

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Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [$11\bar{2}0$] Direction von Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo

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Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals von Okawa, Kiyo, Mannen, Yuina, Fujimoto, Tatsuo, Shioura, Kentaro, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi

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