Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water von Namatsu, Hideo, Kurihara, Kenji, Nagase, Masao, Iwadate, Kazumi, Murase, Katsumi

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Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation von Horiguchi, Seiji, Nagase, Masao, Shiraishi, Kenji, Kageshima, Hiroyuki, Takahashi, Yasuo, Murase, Katsumi

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Observation of Single Electron-Hole Recombination and Photon-Pumped Current in an Asymmetric Si Single-Electron Transistor von Fujiwara, Akira, Takahashi, Yasuo, Murase, Katsumi

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An electron beam nanolithography system and its application to Si nanofabrication von KURIHARA, K, IWADATE, K, NAMATSU, H, NAGASE, M, TAKENAKA, H, MURASE, K

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Dielectric constant of silicon dioxide deposited by atmospheric-pressure chemical vapor deposition using tetraethylorthosilicate and ozone von MURASE, K

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Evidence for activated conduction in a single electron transistor von Morgan, Nicole Y., Abusch-Magder, David, Kastner, Marc A., Takahashi, Yasuo, Tamura, Hiroyuki, Murase, Katsumi

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Metrology of atomic force microscopy for Si nano-structures von NAGASE, M, NAMATSU, H, KURIHARA, K, IWADATE, K, MURASE, K

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Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach von Shiraishi, Kenji, Nagase, Masao, Horiguchi, Seiji, Kageshima, Hiroyuki, Uematsu, Masashi, Takahashi, Yasuo, Murase, Katsumi

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Ultimately thin double-gate SOI MOSFETs von Ernst, T., Cristoloveanu, S., Ghibaudo, G., Ouisse, T., Horiguchi, S., Ono, Y., Takahashi, Y., Murase, K.

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Theory of activated conduction in a Si single-electron transistor von Tamura, Hiroyuki, Takahashi, Yasuo, Murase, Katsumi

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Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors von Fujiwara, Akira, Takahashi, Yasuo, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Thermal desorption studies of silicon dioxide deposited by atmospheric-pressure chemical vapor deposition using tetraethylorthosilicate and ozone von MURASE, K, YABUMOTO, N, KOMINE, Y

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Multigate single-electron transistors and their application to an exclusive-OR gate von Takahashi, Yasuo, Fujiwara, Akira, Yamazaki, Kenji, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector von Takahashi, Yasuo, Fujiwara, Akira, Yamazaki, Kenji, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Si complementary single-electron inverter with voltage gain von Ono, Yukinori, Takahashi, Yasuo, Yamazaki, Kenji, Nagase, Masao, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation von Ono, Yukinori, Takahashi, Yasuo, Yamazaki, Kenji, Nagase, Masao, Namatsu, Hideo, Kurihara, Kenji, Murase, Katsumi

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Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film von Ono, Yukinori, Takahashi, Yasuo, Horiguchi, Seiji, Murase, Katsumi, Tabe, Michiharu

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Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates von Takahashi, Y., Namatsu, H., Kurihara, K., Iwadate, K., Nagase, M., Murase, K.

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Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter von Katsumi Murase, Katsumi Murase, Mamoru Kuwagaki, Mamoru Kuwagaki

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Fabrication method for IC-oriented Si single-electron transistors von Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., Murase, K.

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