GaN Power Transistors on Si Substrates for Switching Applications von Ikeda, Nariaki, Niiyama, Yuki, Kambayashi, Hiroshi, Sato, Yoshihiro, Nomura, Takehiko, Kato, Sadahiro, Yoshida, Seikoh

Volltext

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique von Kambayashi, Hiroshi, Satoh, Yoshihiro, Kokawa, Takuya, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro

Volltext

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation von Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.

Volltext

Normally off operation GaN-based MOSFETs for power electronics applications von Niiyama, Yuki, Ootomo, Shinya, Li, Jiang, Nomura, Takehiko, Kato, Sadahiro, Chow, T Paul

Volltext

Vb/Ron improvement and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates von Ikeda, Nariaki, Kaya, Shusuke, Kokawa, Takuya, Kato, Sadahiro

Volltext

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE von Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh

Volltext

Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage von Kambayashi, Hiroshi, Satoh, Yoshihiro, Ootomo, Shinya, Kokawa, Takuya, Nomura, Takehiko, Kato, Sadahiro, Chow, Tat-sing Pawl

Volltext

(Invited) High Power Normally-Off GaN MOSFET von Kambayashi, Hiroshi, Satoh, Yoshihiro, Kokawa, Takuya, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

Volltext

High power AlGaN/GaN HFETs on 4 inch Si substrates von Ikeda, Nariaki, Kaya, Syuusuke, Li, Jiang, Sato, Yoshihiro, Kokawa, Takuya, Kato, Sadahiro

Volltext

Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD von Iwami, Masayuki, Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Yoshida, Seikoh

Volltext

Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer von Sasaki, Hitoshi, Kato, Sadahiro, Matsuda, Takeyoshi, Sato, Yoshihiro, Iwami, Masayuki, Yoshida, Seikoh

Volltext

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse von Ikeda, N., Kaya, S., Jiang Li, Sato, Y., Kato, S., Yoshida, S.

Volltext

High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effec... von Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

Volltext

High Integrity SiO 2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect... von Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

Volltext

V b /R on improvement and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates von Ikeda, Nariaki, Kaya, Shusuke, Kokawa, Takuya, Kato, Sadahiro

Volltext

Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate von Ikeda, N., Tamura, R., Kokawa, T., Kambayashi, H., Sato, Y., Nomura, T., Kato, S.

Volltext

Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates von Niiyama, Yuki, Li, Zhongda, Paul Chow, T., Li, Jiang, Nomura, Takehiko, Kato, Sadahiro

Volltext

High Integrity SiO 2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect... von Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

Volltext

Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate von Hasegawa, Fumio, Kambayashi, Hiroshi, Li, Jiang, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro, Yoshida, Seiko

Volltext

Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage von Kambayashi, Hiroshi, Satoh, Yoshihiro, Ootomo, Shinya, Kokawa, Takuya, Nomura, Takehiko, Kato, Sadahiro, Chow, Tat-sing Pawl

Volltext