Scattering Study on the Selective Solvent Swelling Induced Surface Reconstruction von Xu, Ting, Goldbach, James T, Misner, Matthew J, Kim, Seunghyun, Gibaud, Alain, Gang, Oleg, Ocko, Ben, Guarini, Kathryn W, Black, Charles T, Hawker, Craig J, Russell, Thomas P

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High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors von Black, C.T., Guarini, K.W., Ying Zhang, Hyungjun Kim, Benedict, J., Sikorski, E., Babich, I.V., Milkove, K.R.

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Microfabricated silicon solid immersion lens von Fletcher, D.A., Crozier, K.B., Guarini, K.W., Minne, S.C., Kino, G.S., Quate, C.F., Goodson, K.E.

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Stable SRAM cell design for the 32 nm node and beyond von Chang, L., Fried, D.M., Hergenrother, J., Sleight, J.W., Dennard, R.H., Montoye, R.K., Sekaric, L., McNab, S.J., Topol, A.W., Adams, C.D., Guarini, K.W., Haensch, W.

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Growth of Silicon Oxide in Thin Film Block Copolymer Scaffolds von Kim, D. H., Jia, X., Lin, Z., Guarini, K. W., Russell, T. P.

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Interface studies of tungsten gate metal–oxide–silicon capacitors von Shang, Huiling, White, Marvin H., Guarini, Kathryn W., Solomon, Paul, Cartier, Eduard, McFeely, Fenton R., Yurkas, John J., Lee, Wen-Chin

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Three dimensional cmos integrated circuits having device layers built on different crystal oriented wafers von CHAN, VICTOR, W GUARINI, KATHRYN W, LEONG, MEIKEI

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Integration of strained Ge into advanced CMOS technology von CHU JACK OON, GUARINI KATHRYN W, SHANG HUILING, IEONG MEIKEI

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Integration of strained Ge into advanced CMOS technology von Shang, Huiling, Ieong, Meikei, Chu, Jack Oon, Guarini, Kathryn W

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Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers von CHAN VICTOR,GUARINI KATHRYN W.,IEONG MEIKEI

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Nonvolatile memory device using semiconductor nanocrystals and method of forming same von GUARINI KATHRYN W, BLACK CHARLES T

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Integration of strained Ge into advanced CMOS technology von CHU JACK OON, GUARINI KATHRYN W, SHANG HUILING, IEONG MEIKEI

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THREE DIMENSIONAL CMOS INTEGRATED CIRCUIT HAVING DEVICE LAYER CONSTITUTED ON WAFER WITH DIFFERENT CRYSTAL ORIENTATION von GUARINI KATHRYN W, LEONG MEIKEI, CHAN VICTOR

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Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers von GUARINI KATHRYN W, IEONG MEIKEI, CHAN VICTOR

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THREE DIMENSIONAL CMOS INTEGRATED CIRCUITS HAVING DEVICE LAYERS BUILT ON DIFFRENT CRYSTAL ORIENTED WAFERS von CHAN, VICTOR, GUARINI, KATHRYN W, JEONG, MEIKEI

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Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers von GUARINI KATHRYN W, IEONG MEIKEI, CHAN VICTOR

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Integration of strained Ge into advanced CMOS technology von Shang, Huiling, Ieong, Meikei, Chu, Jack Oon, Guarini, Kathryn W

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Integration of strained Ge into advanced CMOS technology von CHU JACK OON, GUARINI KATHRYN W, SHANG HUILING, IEONG MEIKEI

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Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers von GUARINI KATHRYN W, IEONG MEIKEI, CHAN VICTOR

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Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers von Chan, Victor, Guarini, Kathryn W, Ieong, Meikei

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