Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities von Larrieu, G., Dubois, E., Wallart, X., Baie, X., Katcki, J.

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The effect of Ni:Si ratio on microstructural properties of Ni/Si ohmic contacts to SiC von Wzorek, M., Borysiewicz, M.A., Czerwinski, A., Myśliwiec, M., Ekielski, M., Ratajczak, J., Piotrowska, A., Kątcki, J.

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Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC von Wzorek, M., Czerwinski, A., Borysiewicz, M.A., Gołaszewska, K., Myśliwiec, M., Ratajczak, J., Piotrowska, A., Kątcki, J.

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Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications von Chen, J. X., Markus, A., Fiore, A., Oesterle, U., Stanley, R. P., Carlin, J. F., Houdré, R., Ilegems, M., Lazzarini, L., Nasi, L., Todaro, M. T., Piscopiello, E., Cingolani, R., Catalano, M., Katcki, J., Ratajczak, J.

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Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides von Larrieu, G., Dubois, E., Wallart, X., Katcki, J.

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Introduction: Themed issue – Papers Arising from 7th Polish–Japanese Joint Seminar on Micro and Nano Analysis von Katcki, J

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Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure von Łaszcz, A., Ratajczak, J., Czerwinski, A., Kątcki, J., Srot, V., Phillipp, F., van Aken, P.A., Breil, N., Larrieu, G., Dubois, E.

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Very low Schottky barrier to n-type silicon with PtEr-stack silicide von Tang, Xiaohui, Katcki, J., Dubois, E., Reckinger, N., Ratajczak, J., Larrieu, G., Loumaye, P., Nisole, O., Bayot, V.

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Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance von CZERWINSKI, A, PLUSKA, M, RATAJCZAK, J, SZERLING, A, KąTCKI, J

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In situ electron beam induced current measurements of the local thickness in semiconductor devices von CZERWINSKI, A., PŁUSKA, M., RATAJCZAK, J., KATCKI, J.

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Depth measurements of etch-pits in GaN with shape reconstruction from SEM images von WZOREK, M, CZERWINSKI, A, RATAJCZAK, J, LUI, A, IACOB, E, KĄTCKI, J

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Characterization of ytterbium silicide formed in ultra high vacuum von Łaszcz, A, Ratajczak, J, Czerwinski, A, Kątcki, J, Srot, V, Phillipp, F, Aken, P A van, Yarekha, D, Reckinger, N, Larrieu, G, Dubois, E

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation von PŁUSKA, M, CZERWINSKI, A, RATAJCZAK, J, KĄTCKI, J, MARONA, L, CZERNECKI, R, LESZCZYŃSKI, M, PERLIN, P

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Identification of electron beam vibration sources by separation of magnetic distortion from electric distortion on scanning electron microscope imaging von PLUSKA, M, CZERWINSKI, A, RATAJCZAK, J, KĄTCKI, J, OSKWAREK, Ł, RAK, R

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Identification and reduction of acoustic-noise influence on focused ion beam (FIB) von Pluska, M., Czerwinski, A., Wzorek, M., Juchniewicz, M., Kątcki, J.

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Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications von RATAJCZAK, J, ŁASZCZ, A, CZERWINSKI, A, KĄTCKI, J, PHILLIPP, F, VAN AKEN, P.A, RECKINGER, N, DUBOIS, E

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Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements von Pluska, M., Czerwinski, A., Szerling, A., Ratajczak, J., Kątcki, J.

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Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers von ŁASZCZ, A, CZERWINSKI, A, RATAJCZAK, J, SZERLING, A, PHILLIPP, F, VAN AKEN, P.A, KĄTCKI, J

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Elimination of scanning electron microscopy image periodic distortions with digital signal‐processing methods von PŁUSKA, M., CZERWINSKI, A., RATAJCZAK, J., KĄTCKI, J., RAK, R.

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Accurate extraction of the diffusion current in silicon p-n junction diodes von Simoen, E., Claeys, C., Czerwinski, A., Katcki, J.

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