Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy von Murata, Tomotaka, Ikeda, Kazuhisa, Yamasaki, Jun, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Continuous-wave operation of InGaN tunable single-mode laser with periodically slotted structure von Kusui, Taisei, Wada, Takumi, Matsushita, Naritoshi, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Advanced Evaluation and Analysis Techniques for Optical and Phonon Properties of Wide-gap Semiconductors von Katayama, Ryuji

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199 nm vacuum-ultraviolet second harmonic generation from SrB4O7 vertical microcavity pumped with picosecond laser von Nambu, Tomoaki, Yoshimura, Masashi, Mori, Yusuke, Fujiwara, Yasufumi, Ishii, Ryota, Kawakami, Yoichi, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping von Tsukakoshi, Mayuko, Tanikawa, Tomoyuki, Yamada, Takumi, Imanishi, Masayuki, Mori, Yusuke, Uemukai, Masahiro, Katayama, Ryuji

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Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics von Fukamachi, Toshihiko, Nishinaka, Junichi, Naniwae, Koichi, Usuda, Shuichi, Fukai, Haruki, Sugitani, Akihiko, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO3 waveguide for high power second harmonic generation von Noro, Ryosuke, Okazaki, Masahide, Mizobata, Ikuo, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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DUV coherent light emission from ultracompact microcavity wavelength conversion device von Nambu, Tomoaki, Yano, Taketo, Umeda, Soshi, Yokoyama, Naoki, Honda, Hiroto, Tanaka, Yasunori, Maegaki, Yutaka, Mori, Yusuke, Yoshimura, Masashi, Kobayashi, Shuhei, Ichikawa, Shuhei, Fujiwara, Yasufumi, Ishii, Ryota, Kawakami, Yoichi, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Polarity inversion of aluminum nitride by direct wafer bonding von Hayashi, Yusuke, Katayama, Ryuji, Akiyama, Toru, Ito, Tomonori, Miyake, Hideto

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Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows von Yoshida, Shin, Shojiki, Kanako, Miyake, Hideto, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals von Ishihara, Hiroki, Shimada, Keiya, Umeda, Soshi, Yokoyama, Naoki, Honda, Hiroto, Kurose, Kazuhiro, Kawata, Yoshimasa, Sugita, Atsushi, Inoue, Yoku, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji, Nakano, Takayuki

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Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure von Nambu, Tomoaki, Nagata, Takumi, Umeda, Soshi, Shiomi, Keishi, Fujiwara, Yasufumi, Hikosaka, Toshiki, Mannan, Abdul, Bagsican, Filchito Renee G., Serita, Kazunori, Kawayama, Iwao, Tonouchi, Masayoshi, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji

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Red to blue wavelength emission of N-polar InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy von Shojiki, Kanako, Tanikawa, Tomoyuki, Choi, Jung-Hun, Kuboya, Shigeyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi

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Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells von Takamiya, Kengo, Yagi, Shuhei, Yaguchi, Hiroyuki, Akiyama, Hidefumi, Shojiki, Kanako, Tanikawa, Tomoyuki, Katayama, Ryuji

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Fabrication of Cu2ZnSnS4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization von Nakayasu, Yuta, Tomai, Takaaki, Oka, Nobuto, Shojiki, Kanako, Kuboya, Shigeyuki, Katayama, Ryuji, Sang, Liwen, Sumiya, Masatomo, Honma, Itaru

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Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations von Tanikawa, Tomoyuki, Shojiki, Kanako, Katayama, Ryuji, Kuboya, Shigeyuki, Matsuoka, Takashi, Honda, Yoshio, Amano, Hiroshi

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Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth von Aisaka, Takashi, Tanikawa, Tomoyuki, Kimura, Takeshi, Shojiki, Kanako, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi

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Nanometer scale fabrication and optical response of InGaN/GaN quantum disks von Lai, Yi-Chun, Higo, Akio, Kiba, Takayuki, Thomas, Cedric, Chen, Shula, Lee, Chang Yong, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Katayama, Ryuji, Shojiki, Kanako, Takayama, Junichi, Yamashita, Ichiro, Murayama, Akihiro, Chi, Gou-Chung, Yu, Peichen, Samukawa, Seiji

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Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy von Shojiki, Kanako, Choi, Jung-Hun, Iwabuchi, Takuya, Usami, Noritaka, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi

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Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy von Yoo, Jinyeop, Shojiki, Kanako, Tanikawa, Tomoyuki, Kuboya, Shigeyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi

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