Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+) von He, A., Xu, S., Foroughi-Abari, A., Karpuzov, D.

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Ink identification by time-of-flight secondary ion mass spectroscopy von He, A., Karpuzov, D., Xu, S.

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Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection von Manova, D., Dimitrova, V., Fukarek, W., Karpuzov, D.

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Computer simulations of surface analysis using ion beams von Ignatova, V., Karpuzov, D., Chakarov, I., Katardjiev, I.

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Metal clustering during depth profiling of thin films von Karpuzov, D., He, A., Xu, S.

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High-energy particle emission from galena and pyrite bombarded with Cs and O ions von Karpuzov, D.S, McIntyre, N.S

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Iron silicide formed in a-Si:Fe thin films by magnetron co-sputtering and ion implantation von Nikolaeva, M, Sendova-Vassileva, M, Dimova-Malinovska, D, Karpuzov, D, Pivin, J.C, Beshkov, G

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Self-organized metal networks at ion-etched Cu ∕ Si and Ag ∕ Si interfaces von Stepanova, M., Dew, S. K., Karpuzov, D. S.

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Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces von Sung, M.M., Kim, C., Bu, H., Karpuzov, D.S., Rabalais, J.W.

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Reactively DC magnetron sputtered thin AlN films studied by X-ray photoelectron spectroscopy and polarised infrared reflection von Manova, D., Dimitrova, V., Karpuzov, D., Yankov, R.

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Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy von KASCHIEVA, S, STEFANOV, K. G, KARPUZOV, D

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Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te + and Pb + ions: computer simulation and TEM study von Bankov, P, Kalitzova, M, Karpuzov, D, Zollo, G, Vitali, G, Pizzuto, C, Angelov, Ch, Faure, J, Kilian, L

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Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures von Stefanov, KG, Kaschieva, S, Karpuzov, D

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Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing von Pizzuto, C., Zollo, G., Vitali, G., Karpuzov, D., Kalitzova, M.

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Mask-edge effects at low ion implantation energies for cluster covered silicon von Hul'ko, O.V, Danailov, D, Karpuzov, D, Zinke-Allmang, M

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High-dose phenomena in zinc-implanted silicon crystals von Simov, S., Kalitzova, M., Karpuzov, D., Yankov, R., Angelov, Ch, Faure, J., Bonhomme, P., Balossier, G.

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Editorial von Guerassimov, N., Karpuzov, D.

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Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment von Chakarov, I.R., Todorov, S.S., Karpuzov, D.S.

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Time evolution of ion slowing-down in amorphous solids von Vichev, R.G., Karpuzov, D.S.

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Low-power pulsed-laser annealing of implanted GaAs von VITALI, G, ROSSI, M, KARPUZOV, D, BUDINOV, H, KALIZOVA, M

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