X-ray diffraction analysis of cubic zincblende III-nitrides von Frentrup, Martin, Lee, Lok Yi, Sahonta, Suman-Lata, Kappers, Menno J, Massabuau, Fabien, Gupta, Priti, Oliver, Rachel A, Humphreys, Colin J, Wallis, David J

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InGaN as a Substrate for AC Photoelectrochemical Imaging von Zhou, Bo, Das, Anirban, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Krause, Steffi

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Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties von Massabuau, Fabien C-P, Rhode, Sneha L, Horton, Matthew K, O’Hanlon, Thomas J, Kovács, András, Zielinski, Marcin S, Kappers, Menno J, Dunin-Borkowski, Rafal E, Humphreys, Colin J, Oliver, Rachel A

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Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography von Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Martin, Tomas L., Bagot, Paul A. J., Moody, Michael P., Oliver, Rachel A.

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Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping von Griffiths, James T, Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J, Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J, Humphreys, Colin J, Oliver, Rachel A

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The Spatial Distribution of Threading Dislocations in Gallium Nitride Films von Moram, Michelle A., Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

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Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells von Bennett, Samantha E, Saxey, David W, Kappers, Menno J, Barnard, Jonathan S, Humphreys, Colin J, Smith, George DW, Oliver, Rachel A

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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength von Christian, George M., Schulz, Stefan, Hammersley, Simon, Kappers, Menno J., Frentrup, Martin, Humphreys, Colin J., Oliver, Rachel A., Dawson, Philip

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Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials von Tang, Fengzai, Moody, Michael P., Martin, Tomas L., Bagot, Paul A.J., Kappers, Menno J., Oliver, Rachel A.

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Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well von Gundimeda, Abhiram, Kusch, Gunnar, Frentrup, Martin, Kappers, Menno J, Wallis, David J, Oliver, Rachel A

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A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures von Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P., Fol, Adrian Le, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

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Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures von Bruckbauer, Jochen, Edwards, Paul R, Sahonta, Suman-Lata, Massabuau, Fabien C-P, Kappers, Menno J, Humphreys, Colin J, Oliver, Rachel A, Martin, Robert W

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Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films von Mandal, Soumen, Thomas, Evan L. H, Middleton, Callum, Gines, Laia, Griffiths, James T, Kappers, Menno J, Oliver, Rachel A, Wallis, David J, Goff, Lucy E, Lynch, Stephen A, Kuball, Martin, Williams, Oliver A

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Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN von Sutherland, Danny, Zhu, Tongtong, Griffiths, James T., Tang, Fengzai, Dawson, Phil, Kundys, Dmytro, Oehler, Fabrice, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.

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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide von Chen, Chen, Ghosh, Saptarsi, Adams, Francesca, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption von Jouvet, Nicolas, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.

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Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN von Naresh-Kumar, Gunasekar, Bruckbauer, Jochen, Edwards, Paul R., Kraeusel, Simon, Hourahine, Ben, Martin, Robert W., Kappers, Menno J., Moram, Michelle A., Lovelock, Stephen, Oliver, Rachel A., Humphreys, Colin J., Trager-Cowan, Carol

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Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM von Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot von Jarjour, Anas F, Oliver, Rachel A, Tahraoui, Abbes, Kappers, Menno J, Humphreys, Colin J, Taylor, Robert A

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Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN von Lee, Lok Yi, Frentrup, Martin, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Wallis, David J.

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