Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces von Toyama, Satoko, Seki, Takehito, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka, Ikuhara, Yuichi, Shibata, Naoya

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Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells von Yamaguchi, Yudai, Kanitani, Yuya, Kudo, Yoshihiro, Uzuhashi, Jun, Ohkubo, Tadakatsu, Hono, Kazuhiro, Tomiya, Shigetaka

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Quantitative electric field mapping in semiconductor heterostructures via tilt-scan averaged DPC STEM von Toyama, Satoko, Seki, Takehito, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka, Ikuhara, Yuichi, Shibata, Naoya

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Probing the Internal Atomic Charge Density Distributions in Real Space von Sánchez-Santolino, Gabriel, Lugg, Nathan R, Seki, Takehito, Ishikawa, Ryo, Findlay, Scott D, Kohno, Yuji, Kanitani, Yuya, Tanaka, Shinji, Tomiya, Shigetaka, Ikuhara, Yuichi, Shibata, Naoya

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Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging von Yamashita, Shunsuke, Fukushima, Sei, Kikkawa, Jun, Arai, Ryoji, Kanitani, Yuya, Kimoto, Koji, Kudo, Yoshihiro

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Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits von Tomiya, Shigetaka, Kanitani, Yuya, Tanaka, Shinji, Ohkubo, Tadakatsu, Hono, Kazuhiro

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Impact of oxygen on band structure at the Ni/GaN interface revealed by hard X-ray photoelectron spectroscopy von Mizushima, Hirotaka, Arai, Ryoji, Inaba, Yuta, Yamashita, Shunsuke, Yamaguchi, Yudai, Kanitani, Yuya, Kudo, Yoshihiro, Hamaguchi, Tatsushi, Koda, Rintaro, Yanashima, Katsunori, Ohkubo, Tadakatsu, Hono, Kazuhiro, Tomiya, Shigetaka

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Influence of photoexcited carriers on compositional measurements by APT: AlGaN alloy case study von Kanitani, Yuya, Tomiya, Shigetaka, Ohkubo, Tadakatsu, Hono, Kazuhiro

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Highly efficient operation and uniform characteristics of curved mirror vertical-cavity surface-emitting lasers von Ito, Maiko, Hamaguchi, Tatsushi, Makino, Tomohiro, Hayashi, Kentaro, Kearns, Jared A., Ohara, Maho, Kobayashi, Noriko, Nagane, Shoetsu, Sato, Koichi, Nakamura, Yuki, Hoshina, Yukio, Jyoukawa, Tatsurou, Watanabe, Takumi, Kikuchi, Yuichiro, Kasahara, Seiji, Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Nakayama, Eiji, Koda, Rintaro, Futagawa, Noriyuki

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Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence... von Mori-Tamamura, Keito, Takahashi, Yuchi, Sakai, Shigeta, Morimoto, Yuya, Hirama, Junji, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

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Atom probe tomography of compositional fluctuation in GaInN layers von Kanitani, Yuya, Tanaka, Shinji, Tomiya, Shigetaka, Ohkubo, Tadakatsu, Hono, Kazuhiro

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A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy von YAMAGUCHI, Atsushi A., KAWAKAMI, Kohei, SHIMIZU, Naoto, TAKAHASHI, Yuchi, KOBAYASHI, Genki, NAKANO, Takashi, SAKAI, Shigeta, KANITANI, Yuya, TOMIYA, Shigetaka

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Probing nanoscale potential modulation by defect-induced gap states on GaAs(110) with light-modulated scanning tunneling spectroscopy von Yoshida, Shoji, Kanitani, Yuya, Takeuchi, Osamu, Shigekawa, Hidemi

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Microscopic basis for the mechanism of carrier dynamics in an operating p-n junction examined by using light-modulated scanning tunneling spectroscopy von Yoshida, Shoji, Kanitani, Yuya, Oshima, Ryuji, Okada, Yoshitaka, Takeuchi, Osamu, Shigekawa, Hidemi

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Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage von Mori-Tamamura, Keito, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

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Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red von Mori-Tamamura, Keito, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

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Electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers on InP(311)B substrate von Shiomi, Michinori, Kishimoto, Haruki, Watanabe, Tomomasa, Tanaka, Masayuki, Kasahara, Daiji, Nakajima, Hiroshi, Takanohashi, Masashi, Arai, Ryoji, Inaba, Yuta, Yamaguchi, Yudai, Kanitani, Yuya, Kudo, Yoshihiro, Yokozeki, Mikihiro, Futagawa, Noriyuki, Akahane, Kouichi, Yamamoto, Naokatsu

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Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots von Yamaguchi, Yudai, Inaba, Yuta, Arai, Ryoji, Kanitani, Yuya, Kudo, Yoshihiro, Shiomi, Michinori, Kasahara, Daiji, Yokozeki, Mikihiro, Fuutagawa, Noriyuki, Uzuhashi, Jun, Ohkubo, Tadakatsu, Hono, Kazuhiro, Akahane, Kouichi, Yamamoto, Naokatsu, Tomiya, Shigetaka

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InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer von Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tasai, Kunihiko, Yamaguchi, Atsushi A., Tomiya, Shigetaka

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Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes von Oshima, Itsuki, Ikeda, Yuma, Sakai, Shigeta, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

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