Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices von LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi

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Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks von Han, Jin-Ping, Rasch, Malte J., Liu, Zuoguang, Solomon, Paul, Brew, Kevin, Cheng, Kangguo, Ok, Injo, Chan, Victor, Longstreet, Michael, Kim, Wanki, Bruce, Robert L., Cheng, Cheng-Wei, Saulnier, Nicole, Narayanan, Vijay

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(Invited) FinFET Technology von Cheng, Kangguo

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Fully depleted SOI (FDSOI) technology von Cheng, Kangguo, Khakifirooz, Ali

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Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length von Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.

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High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension von Khakifirooz, Ali, Kangguo Cheng, Jin Cai, Kimball, Anne, Kulkarni, Pranita, Reznicek, Alexander, Adam, Thomas, Edge, Lisa, Huiming Bu, Doris, Bruce, Shahidi, Ghavam

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Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs von Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam

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Evaluation of crystallization kinetics of glasses by non-isothermal analysis von Cheng, Kangguo

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Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation von Soon-Cheon Seo, Chih-Chao Yang, Miaomiao Wang, Monsieur, Frederic, Adam, Lahir, Johnson, Jeffrey B, Horak, Dave, Fan, Susan, Kangguo Cheng, Stathis, James, Doris, Bruce

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Fully depleted SOI （FDSOI） technology von Kangguo CHENG Ali KHAKIFIROOZ

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Determining crystallization kinetic parameters of Li2O-Al2O3-SiO2 glass from derivative differential thermal analysis curves von Cheng, Kangguo

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Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond von Khakifirooz, A., Kangguo Cheng, Jagannathan, B., Kulkarni, P., Sleight, J.W., Shahrjerdi, D., Chang, J.B., Sungjae Lee, Junjun Li, Huiming Bu, Gauthier, R., Doris, B., Shahidi, G.

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The future of SOI transistor technology von Doris, B., Khakifirooz, A., Kangguo Cheng

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Improved Air Spacer for Highly Scaled CMOS Technology von Cheng, Kangguo, Park, Chanro, Wu, Heng, Li, Juntao, Nguyen, Son, Zhang, Jingyun, Wang, Miaomiao, Mehta, Sanjay, Liu, Zuoguang, Conti, Richard, Loubet, Nicolas J., Frougier, Julien, Greene, Andrew, Yamashita, Tenko, Haran, Balasubramanian, Divakaruni, Rama

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Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps" von Kangguo Cheng, Lyding, J.W.

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Carbon effects on crystallization kinetics of Li2O-Al2O3-SiO2 glasses von Cheng, Kangguo

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Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect von Kangguo Cheng, Lyding, J.W.

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Fabrication of a vertical fin field effect transistor with reduced dimensional variations von Cheng, Kangguo

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Differential Thermal Analysis on the Crystallization Kinetics of K2O-B2O3-MgO-Al2O3-SiO2-TiO2-F Glass von Cheng, Kangguo, Wan, Julin, Liang, Kaiming

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FIELD EFFECT TRANSISTOR WITH REDUCED PARASITIC CAPACITANCE AND RESISTANCE von CHENG, Kangguo

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