Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate von Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Lim, Dongsuk, Wang, Jianwei, Li, Lijun, Khan, Muhammad Atif, Kim, Gil-Ho

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Observation of negative differential resistance in mesoscopic graphene oxide devices von Rathi, Servin, Lee, Inyeal, Kang, Moonshik, Lim, Dongsuk, Lee, Yoontae, Yamacli, Serhan, Joh, Han-Ik, Kim, Seongsu, Kim, Sang-Woo, Yun, Sun Jin, Choi, Sukwon, Kim, Gil-Ho

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Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment von Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Li, Lijun, Khan, Muhammad Atif, Lim, Dongsuk, Lee, Yoontae, Park, Jinwoo, Yun, Sun Jin, Youn, Doo-Hyeb, Jun, Chungsam, Kim, Gil-Ho

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Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor von Venkatesan, A, Rathi, Servin, Lee, In-yeal, Park, Jinwoo, Lim, Dongsuk, Kang, Moonshik, Joh, Han-Ik, Kim, Gil-Ho, Kannan, E S

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Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate von Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho, Aoki, Nobuyuki, Ochiai, Yuichi, Watanabe, Kenji, Taniguchi, Takashi

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Nanoparticle pattern deposition from gas phase onto charged flat surface von Kang, Moonshik, Kim, Hyoungchul, Han, Bangwoo, Suh, Jeongsoo, Park, Jeonghan, Choi, Mansoo

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Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrode von Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Rathi, Servin, Kang, Moonshik, Uemura, Tetsuya, Kim, Gil-Ho

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P-doping and efficient carrier injection induced by graphene oxide for high performing WSe2 rectification devices von Khan, Muhammad Atif, Rathi, Servin, Lee, Inyeal, Li, Lijun, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho

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High performance MoS2-based field-effect transistor enabled by hydrazine doping von Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho

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Reduction of persistent photoconductivity in a few-layer MoS2 field-effect transistor by graphene oxide functionalization von Rathi, Neha, Rathi, Servin, Lee, Inyeal, Wang, Jianwei, Kang, Moonshik, Lim, Dongsuk, Khan, Muhammad Atif, Lee, Yoontae, Kim, Gil-Ho

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Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatmentElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr0846... von Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Li, Lijun, Khan, Muhammad Atif, Lim, Dongsuk, Lee, Yoontae, Park, Jinwoo, Yun, Sun Jin, Youn, Doo-Hyeb, Jun, Chungsam, Kim, Gil-Ho

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Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment von Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Li, Lijun, Khan, Muhammad Atif, Lim, Dongsuk, Lee, Yoontae, Park, Jinwoo, Yun, Sun Jin, Youn, Doo-Hyeb, Jun, Chungsam, Kim, Gil-Ho

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Raman shift and electrical properties of MoS 2 bilayer on boron nitride substrate von Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho, Aoki, Nobuyuki, Ochiai, Yuichi, Watanabe, Kenji, Taniguchi, Takashi

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Raman shift and electrical properties of MoS sub(2) bilayer on boron nitride substrate von Li, Lijun, Lee, Inyeal, Lim, Dongsuk, Kang, Moonshik, Kim, Gil-Ho, Aoki, Nobuyuki, Ochiai, Yuichi, Watanabe, Kenji, Taniguchi, Takashi

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High performance MoS 2 -based field-effect transistor enabled by hydrazine doping von Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho

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High performance MoS sub(2)-based field-effect transistor enabled by hydrazine doping von Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho

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Reduction of persistent photoconductivity in a few-layer MoS 2 field-effect transistor by graphene oxide functionalization von Rathi, Neha, Rathi, Servin, Lee, Inyeal, Wang, Jianwei, Kang, Moonshik, Lim, Dongsuk, Khan, Muhammad Atif, Lee, Yoontae, Kim, Gil-Ho

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Electrical characterization of multilayer HfSe{sub 2} field-effect transistors on SiO{sub 2} substrate von Kang, Moonshik, Manufacturing Engineering Team, Memory Division, Samsung Electronics Co., Hwasung 445-701, Rathi, Servin, Lee, Inyeal, Lim, Dongsuk, Wang, Jianwei, Li, Lijun, Khan, Muhammad Atif, Kim, Gil-Ho

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Analysis and design of electronic transformers for electric power distribution system von Kang, M., Enjeti, P.N., Pitel, I.J.

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Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensor von Venkatesan, A, Rathi, Servin, Lee, In-yeal, Park, Jinwoo, Lim, Dongsuk, Kang, Moonshik, Joh, Han-Ik, Kim, Gil-Ho, Kannan, E S

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