6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations von Jung, Junki, Seok, Ogyun, Kang, In Ho, Kim, Hyoung Woo, Bahng, Wook, Lee, Ho-Jun

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A New Feature Selection Method for One-Class Classification Problems von JEONG, Young-Seon, KANG, In-Ho, JEONG, Myong-Kee, KONG, Dongjoon

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Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH von Na, Moonkyong, Kang, In Ho, Moon, Jeong Hyun, Bahng, Wook

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Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors von Bae, Jinho, Hyoung Woo Kim, In Ho Kang, Kim, Jihyun

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Dual-field plated beta-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 V von Bae, Jinho, Kim, Hyoung Woo, Kang, In Ho, Kim, Jihyun

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Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode von Kang, In-Ho, Kim, Sang-Cheol, Moon, Jung-Hyeon, Bahng, Wook, Kim, Nam-Kyun

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Improved reverse current-voltage characteristics of a 4H-SiC PiN diode by bias-enhanced reduction of surface damage von Kang, In-Ho, Bahng, Wook, Moon, Jeong-Hyun, Yun, Seung-Bok

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Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer von Kang, In Ho, Bahng, Wook, Moon, Jeong Hyun, Na, Moon Kyong

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Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapour von Poobalan, Banu, Hyun Moon, Jeong, Kim, Sang-Cheol, Joo, Sung-Jae, Bahng, Wook, Ho Kang, In, Kim, Nam-Kyun, Yew Cheong, Kuan

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Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs von Seok, Ogyun, Kim, Hyoung Woo, Kang, In Ho, Ha, Min-Woo, Bahng, Wook

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Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well von Seok, Ogyun, Ha, Min-Woo, Kang, In Ho, Kim, Hyoung Woo, Kim, Dong Young, Bahng, Wook

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Enhanced field-emission capacity by density control of a CNT cathode using post-plasma treatment von Choi, Haeyoung, Ji Shin, Yun, Il Cha, Seung, Ho Kang, In, Bahng, Wook

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Compact Multi-harmonic Suppression LTCC Bandpass Filter Using Parallel Short-ended Coupled-line Structure von Wang, Xu‐Guang, Yun, Young, Kang, In‐Ho

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Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes von Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang Heon

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Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics von Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Park, Him-Chan, Yang, Chang Heon

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High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate von Bae, Jinho, Kim, Hyoung Woo, Kang, In Ho, Yang, Gwangseok, Kim, Jihyun

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Erratum to: Journal of the Korean Physical Society, Vol. 71, No. 10 von Shin, Dong Hee, Heo, Jin Hyuck, Im, Sang Hyuk, Lee, Rena, Kim, Kyubo, Cho, Samju, Lim, Sangwook, Lee, Suk, Shim, Jang Bo, Huh, Hyun Do, Lee, Sang Hoon, Ahn, Sohyun, Nobi, Ashadun, Lee, Jae Woo, Lim, Hyunwoo, Lee, Hunwoo, Cho, Hyosung, Seo, Changwoo, Je, Uikyu, Park, Chulkyu, Kim, Kyuseok, Kim, Guna, Park, Soyoung, Lee, Dongyeon, Kang, Seokyoon, Lee, Minsik, Cao, Jingtai, Zhao, Xiaohui, Li, Zhaokun, Liu, Wei, Gu, Haijun, Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang Heon, Kim, Kyungil, Kim, Youngman, Lee, Kang Seog, Hong, Yoo-Seung, Cho, Chun-Hyung, Sung, Hyuk-Kee, Hyun, June-Won, Kim, Gang Bae, Lee, Ju Ho, Kim, Yeon Jung, Hwang, Seungjin, Jeong, Jihoon, Cho, Seryeyohan, Lee, Jongmin, Yu, Tae Jun, Lee, Kang Il, Lee, Geon Joon, Park, Gyungsoon, Choi, Eun Ha, Kim, Dong-Hwan, Jeong, Jun-Seok, Eom, Su-Keun, Lee, Jae-Gil, Seo, Kwang-Seok, Cha, Ho-Young, Ko, Young Joon, Kim, Hyun Soo, Jung, Jong Hoon, Jeong, Inho, Song, Hyunwook, Lee, B. C., Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Park, Seran, Ko, Dae-Hong, Ahn, Kwang Jun, Cho, Sungwan, Kim, Sang Goon, Hong, Kimin, Shim, Seung-Bo, Jo, Myunglae, Cho, Sung Un, Park, Yun Daniel, Kim, Hee-Cheol, Kim, Seok

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Correlation between reverse characteristics and structural defects in 4H-SiC PiN diode von Yun, Seung Bok, Bahng, Wook, Kang, In-Ho, Shin, Yun Ji, Han, Sang Bo

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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET von Jung, Soon-Yen, Kim, Yong-Jin, Lee, Won-Jae, Zhang, Ying-Ying, Zhong, Zhun, Li, Shi-Guang, Kang, In-Ho, Lee, Ga-Won, Wang, Jin-Suk, Lee, Hi-Deok, Kim, Yeong-Cheol, Kim, Ji-Young, Ryu, Hyuk Hyun

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Transactional Query Identification in Web Search von Kang, In-Ho

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