Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration von Takahashi, Ryo, Fujiki, Ryoto, Hozo, Keisuke, Hiramatsu, Ryoya, Matsukura, Makoto, Kojima, Takahiro, Han, Dong-Pyo, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

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Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer von Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Tanaka, Shunya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy von Yoshikawa, Akira, Nagatomi, Takaharu, Morishita, Tomohiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Temperature-dependent photoluminescence properties of porous fluorescent SiC von Lu, Weifang, Tarekegne, Abebe T., Ou, Yiyu, Kamiyama, Satoshi, Ou, Haiyan

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AlGaN-based UV-B laser diode with a high optical confinement factor von Tanaka, Shunya, Ogino, Yuya, Yamada, Kazuki, Omori, Tomoya, Ogura, Reo, Teramura, Shohei, Shimokawa, Moe, Ishizuka, Sayaka, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers von Iida, Daisuke, Lu, Shen, Hirahara, Sota, Niwa, Kazumasa, Kamiyama, Satoshi, Ohkawa, Kazuhiro

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Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy von Akatsuka, Yasuto, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers von Tanaka, Shunya, Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers von Kawase, Yuta, Ikeda, Syunya, Sakuragi, Yusuke, Yasue, Shinji, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires von Lu, Weifang, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Suzuki, Atsushi, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes von Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN von Shojiki, Kanako, Shimokawa, Moe, Iwayama, Sho, Omori, Tomoya, Teramura, Shohei, Yamaguchi, Akihiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

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Theoretical investigation of nitride nanowire‐based quantum‐shell lasers von Kurisaki, Yuki, Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu

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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing von Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu

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Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs von Inaba, Soma, Lu, Weifang, Ito, Kazuma, Katsuro, Sae, Nakayama, Nanami, Shima, Ayaka, Jinno, Yukimi, Yamamura, Shiori, Sone, Naoki, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

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In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps von Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors von Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki

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Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis von Han, Dong-Pyo, Yamamoto, Kengo, Ishimoto, Seiji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

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Improved Efficiency of 255--280 nm AlGaN-Based Light-Emitting Diodes von Pernot, Cyril, Kim, Myunghee, Fukahori, Shinya, Inazu, Tetsuhiko, Fujita, Takehiko, Nagasawa, Yosuke, Hirano, Akira, Ippommatsu, Masamichi, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

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Recent development of UV-B laser diodes von Iwaya, Motoaki, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Shimokawa, Moe, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

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