Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation von Komatsu, Hiroki, Kano, Takuo, Yamakami, Tomohiko, Kamimura, Kiichi, Akahane, Yoshiyuki, Kimura, Kyosuke, Watanabe, Yukimune

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Growth mechanisms of 3C-SiC layer by carbonization of Si(100) substrates in high-vacuum region von Watanabe, Yukimune, Horikawa, Tsuyoshi, Kamimura, Kiichi

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Effect of Series Resistance on Field Emission Current von Kamimura, Kiichi, Yamakami, Tomohiko

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Model Calculation for the Field Enhancement Factor of Carbon Nanowall Array von YAMAKAMI, Tomohiko, YAMASHITA, Masahiro, HAYASHIBE, Rinpei, KAMIMURA, Kiichi

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Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States von Sakai, Takashi, Hemmi, Mitsunori, Yamakami, Tomohiko, Onuma, Yoshiharu, Murata, Yusuke, Kamimura, Kiichi, Hayashibe, Rinpei

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Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal--Insulator--Semiconductor Diode von Yamakami, Tomohiko, Suzuki, Shinichiro, Henmi, Mitsunori, Murata, Yusuke, Hayashibe, Rinpei, Kamimura, Kiichi

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Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride von Abe, Katsuya, Nagasaka, Yohei, Kida, Takahiro, Yamakami, Tomohiko, Hayashibe, Rinpei, Kamimura, Kiichi

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Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode von KAMIMURA, Kiichi, SHIOZAWA, Hiroaki, YAMAKAMI, Tomohiko, HAYASHIBE, Rinpei

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The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC von Kamimura, Kiichi, Watanabe, Yukimune, Horikawa, Tsuyoshi

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Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects von Kawana, Noriyasu, Kamimura, Kiichi, Watanabe, Yukimune, Horikawa, Tsuyoshi

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Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases von Yamakami, Tomohiko, Kano, Takuo, Kimura, Kyosuke, Kamimura, Kiichi, Akahane, Yoshiyuki, Fujimaki, Shinji, Watanabe, Yukimune

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Plasma Nitridation of 4H-SiC by Glow Discharge of N sub(2)/H sub(2) Mixed Gases von Akahane, Yoshiyuki, Kimura, Kyosuke, Kano, Takuo, Watanabe, Yukimune, Yamakami, Tomohiko, Fujimaki, Shinji, Kamimura, Kiichi

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Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure von Yamakami, Tomohiko, Sakai, Takashi, Kamimura, Kiichi, Hemmi, Mitsunori, Hayashibe, Rinpei

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X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3 von Abe, Koji, Nakao, Masato, Yamagami, Takanobu, YingShen, L., Kamimura, Kiichi, Hashimoto, S., Hayashibe, R.

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Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO sub(2)/SiC MIS Structure von Hemmi, Mitsunori, Sakai, Takashi, Yamakami, Tomohiko, Hayashibe, Rinpei, Kamimura, Kiichi

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Preparation of Carbon Films by Hot-Filament-Assisted Sputtering for Field Emission Cathode von Abe, Katsuya, Maezawa, Yosuke, Hayashibe, Rinpei, Yamakami, Tomohiko, Nakao, Masato, Kamimura, Kiichi

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Highly oriented crystalline carbon thin films obtained by DC magnetron sputtering with a hot filament von ONUMA, Y, KAWAI, Y, NAKAO, M, KAMIMURA, K

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Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas von Shinoda, Keisuke, Tsukahara, Masahiro, Shimada, Hiroyuki, Watanabe, Yukimune, Furusawa, Masahiro, Horikawa, Tsuyoshi, Kamimura, Kiichi

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Characterization of contact resistance between electrode and TaNx thin-film resistor prepared by reactive sputtering von Obata, Motoki, Sakuda, Teruyuki, Hayashibe, Rinpei, Kamimura, Kiichi

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Contact Resistance of SnO 2 Films Determined by the Transmission Line Model Method von Kiichi Kamimura, Kiichi Kamimura, ZhanHe Wang, ZhanHe Wang, Yoshiharu Onuma, Yoshiharu Onuma

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