Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes von Okino, Hiroyuki, Kameshiro, Norifumi, Konishi, Kumiko, Shima, Akio, Yamada, Ren-ichi

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Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes von Konishi, Kumiko, Kameshiro, Norifumi, Yokoyama, Natsuki, Shima, Akio, Shimamoto, Yasuhiro

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Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE von Honda, Yoshio, Kameshiro, Norifumi, Yamaguchi, Masahito, Sawaki, Nobuhiko

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Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current-Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes von Mochizuki, K., Kameshiro, N., Onose, H., Yokoyama, N.

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Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p-n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring von Mochizuki, Kazuhiro, Kameshiro, Norifumi, Matsushima, Hiroyuki, Okino, Hiroyuki, Yamada, Renichi

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes von Okino, Hiroyuki, Yamada, Renichi, Konishi, Kumiko, Inada, Naomi, Shima, Akio, Mochizuki, Kazuhiro, Yokoyama, Natsuki, Kameshiro, Norifumi

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Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes von Shima, Akio, Shimamoto, Yasuhiro, Konishi, Kumiko, Kameshiro, Norifumi, Yokoyama, Natsuki

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Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate von Tanaka, Shigeyasu, Honda, Yoshio, Kameshiro, Norifumi, Iwasaki, Ryuta, Sawaki, Nobuhiko, Tanji, Takayoshi

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A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT von Miki, Hiroshi, Toyota, Yoshiaki, Mochizuki, Kazuhiro, Yokoyama, Natsuki, Yasui, Kan, Okino, Hiroyuki, Hasegawa, Jiro, Matsuhima, Hiroyuki, Mori, Mutsuhiro, Yamada, Renichi, Kameshiro, Norifumi, Onose, Hidekatsu, Hirao, Takashi, Oda, Tetsuo

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Automatic display system for gaze area and remote state monitoring system using the same von Kameshiro, Norifumi, Yamamoto, Keisuke

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Information processing system and information processing method von Takuya Okuyama, Norifumi Kameshiro

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Information processing system and information processing method von Takuya Okuyama, Norifumi Kameshiro

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AUTOMATIC DISPLAY SYSTEM FOR GAZE AREA AND REMOTE STATE MONITORING SYSTEM USING THE SAME von YAMAMOTO, Keisuke, KAMESHIRO, Norifumi

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Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer von Bu, Yuan, Kameshiro, Norifumi, Shima, Akio, Yamada, Ren-ichi, Shimamoto, Yasuhiro

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INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD von KAMESHIRO, Norifumi, OKUYAMA, Takuya

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Radiation detector and radiation detection device using the same von Kameshiro, Norifumi, Shima, Akio

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SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, POWER CONVERSION APPARATUS, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAIL VEHICLE von MOCHIZUKI, Kazuhiro, KAMESHIRO, Norifumi

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Halbleitervorrichtung von Kameshiro, Norifumi, Yokoyama, Natsuki

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RADIATION DETECTOR AND RADIATION DETECTION DEVICE USING THE SAME von KAMESHIRO Norifumi, SHIMA Akio

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AUTOMATIC DISPLAY SYSTEM FOR WATCH AREA AND REMOTE STATE MONITORING SYSTEM USING THE SAME von YAMAMOTO TAKAAKI, KAMESHIRO NORIFUMI

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