GaN Power Transistors on Si Substrates for Switching Applications von Ikeda, Nariaki, Niiyama, Yuki, Kambayashi, Hiroshi, Sato, Yoshihiro, Nomura, Takehiko, Kato, Sadahiro, Yoshida, Seikoh

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High Quality SiO2/Al2O3 Gate Stack for GaN Metal--Oxide--Semiconductor Field-Effect Transistor von Kambayashi, Hiroshi, Nomura, Takehiko, Ueda, Hirokazu, Harada, Katsushige, Morozumi, Yuichiro, Hasebe, Kazuhide, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

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Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation von Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.

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High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique von Kambayashi, Hiroshi, Satoh, Yoshihiro, Kokawa, Takuya, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro

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High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching von Nomura, Takehiko, Kambayashi, Hiroshi, Masuda, Mitsuru, Ishii, Sonomi, Ikeda, Nariaki, Lee, Jiang, Yoshida, Seikoh

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Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application von Ikeda, Nariaki, Kato, Kazuo, Kondoh, Kazuo, Kambayashi, Hiroshi, Li, Jiang, Yoshida, Seikoh

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High-quality SiO2/GaN interface for enhanced operation field-effect transistor von Niiyama, Yuki, Shinagawa, Tatsuyuki, Ootomo, Shinya, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh

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Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates von Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh, Chow, Tat-sing Paul

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Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage von Kambayashi, Hiroshi, Satoh, Yoshihiro, Ootomo, Shinya, Kokawa, Takuya, Nomura, Takehiko, Kato, Sadahiro, Chow, Tat-sing Pawl

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(Invited) High Power Normally-Off GaN MOSFET von Kambayashi, Hiroshi, Satoh, Yoshihiro, Kokawa, Takuya, Ikeda, Nariaki, Nomura, Takehiko, Kato, Sadahiro, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

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Seminar  Tips for Teaching Statistics to Social Science and Liberal Arts Students von Kambayashi, Hiroshi

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数理社会学ワンステップアップ講座　統計学・計量社会学をどう教えるか von Kambayashi, Hiroshi

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Growth characteristics of Ca Cd1−F2 films on Si substrates using CaF2 buffer layer von Kambayashi, Hiroshi, Gotoh, Takuji, Maeda, Hiroshi, Tsutsui, Kazuo

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High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates von Nomura, Takehiko, Kambayashi, Hiroshi, Niiyama, Yuki, Otomo, Shinya, Yoshida, Seikoh

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High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effec... von Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

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High Integrity SiO 2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect... von Kambayashi, Hiroshi, Nomura, Takehiko, Kato, Sadahiro, Ueda, Hirokazu, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

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Epitaxial Growth of Ca x Cd 1-x F 2 Mixed Crystal Films on Si Substrates von Takuji Gotoh, Takuji Gotoh, Hiroshi Kambayashi, Hiroshi Kambayashi, Kazuo Tsutsui, Kazuo Tsutsui

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250 °C operation normally-off GaN MOSFETs von Niiyama, Yuki, Kambayashi, Hiroshi, Ootomo, Shinya, Nomura, Takehiko, Yoshida, Seikoh

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Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate von Ikeda, N., Tamura, R., Kokawa, T., Kambayashi, H., Sato, Y., Nomura, T., Kato, S.

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High‐quality SiO 2 /GaN interface for enhanced operation field‐effect transistor von Niiyama, Yuki, Shinagawa, Tatsuyuki, Ootomo, Shinya, Kambayashi, Hiroshi, Nomura, Takehiko, Yoshida, Seikoh

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