A Flexible Conjugated Polymer Laser von Kallinger, Christian, Hilmer, Martin, Haugeneder, Andreas, Perner, Martin, Spirkl, Wolfgang, Lemmer, Uli, Feldmann, Jochen, Scherf, Ullrich, Müllen, Klaus, Gombert, Andreas, Wittwer, Volker

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Nanotechnologie: Laserlicht aus Polymeren: Plastik als Lasermedium ist biegsam, billig und praktisch von Lemmer, Uli, Kallinger, Christian, Feldmann, Jochen

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Nanotechnologie: Laserlicht aus Polymeren: Plastik als Lasermedium ist biegsam, billig und praktisch von Lemmer, Uli, Kallinger, Christian, Feldmann, Jochen

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Laser mit einem organischen Emittermaterial und verteilter Rückkoppelung von HAUGENEDER, ANDREAS., 82008 UNTERHACHING, DE, WITTWER, VOLKER. DR., 79112 FREIBURG, DE, SPIRKL, WOLFGANG., 82110 GERMERING, DE, KALLINGER, CHRISTIAN., 85375 NEUFAHRN, DE, FELDMANN, JOCHEN, DR., 85591 VATERSTETTEN, DE, HILMER, MARTIN, 80805 MUENCHEN, DE, GOMBERT, ANDREAS., 79106 FREIBURG, DE, SCHERF, ULLRICH. DR., 55252 MAINZ-KASTEL, DE, LEMMER, ULRICH., 82054 SAUERLACH, DE

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LASER WITH AN ORGANIC EMITTER MATERIAL AND DISTRIBUTED FEEDBACK von FELDMANN, JOCHEN, GOMBERT, ANDREAS, SPIRKL, WOLFGANG, HILMER, MARTIN, WITTWER, VOLKER, SCHERF, ULLRICH, HAUGENEDER, ANDREAS, KALLINGER, CHRISTIAN, LEMMER, ULRICH

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LASER WITH AN ORGANIC EMITTER MATERIAL AND DISTRIBUTED FEEDBACK von FELDMANN, JOCHEN, GOMBERT, ANDREAS, SPIRKL, WOLFGANG, HILMER, MARTIN, WITTWER, VOLKER, SCHERF, ULLRICH, HAUGENEDER, ANDREAS, KALLINGER, CHRISTIAN, LEMMER, ULRICH

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Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor von Hens, Philip, Kranert, Christian, Erlekampf, Jürgen, Kallinger, Birgit, Albrecht, Kevin M.

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HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices von Friedrich, Jochen, Berwian, Patrick, Rommel, Mathias, Kallinger, Birgit, Ehlers, Christian

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Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV von Kallinger, Birgit, Thomas, Bernd, Hecht, Christian

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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC von Friedrich, Jochen, Berwian, Patrick, Kallinger, Birgit, Azizi, Maral, Friedrichs, Peter, Rommel, Mathias, Hecht, Christian

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SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV von Friedrich, Jochen, Berwian, Patrick, Kallinger, Birgit, Friedrichs, Peter, Thomas, Bernd, Peters, Dethard, Hecht, Christian

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Large-area homoepitaxial growth of low-doped thick epilayers for power devices with V(BR) > 4 kV von Thomas, Bernd, Hecht, Christian, Kallinger, Birgit

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HCl assisted growth of thick 4H-SiC epilayers for bipolar devices von Kallinger, Birgit, Ehlers, Christian, Berwian, Patrick, Rommel, Mathias, Friedrich, Jochen

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Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation: Presentation held at TMS Annual Meeting 2014 at San Diego, California, February 16-20, 2014; i... von Kallinger, Birgit, Ehlers, Christian, Berwian, Patrick, Friedrich, Jochen, Rommel, Mathias

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Solibri API-Regelentwicklung – Programmierung von Prüfschablonen für Solibri von Fischer, Simon, Pfeiffer, Daniel, Kallinger, Markus, Loibl, Patrick, Urban, Harald, Schranz, Christian

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Defects and carrier lifetime in 4H-Silicon Carbide: Presentation held at E-MRS Fall meeting 2018, Warsaw von Kallinger, Birgit, Erlekampf, Jürgen, Rommel, Mathias, Berwian, Patrick, Friedrich, J, Matthus, Christian D

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The Second APOKASC Catalog: The Empirical Approach von Pinsonneault, Marc H, Elsworth, Yvonne P, Tayar, Jamie, Serenelli, Aldo, Stello, Dennis, Zinn, Joel, Mathur, Savita, García, Rafael A, Johnson, Jennifer A, Hekker, Saskia, Huber, Daniel, Kallinger, Thomas, Mészáros, Szabolcs, Mosser, Benoit, Stassun, Keivan, Girardi, Léo, Rodrigues, Thaíse S, Victor Silva Aguirre, An, Deokkeun, Basu, Sarbani, Chaplin, William J, Corsaro, Enrico, Cunha, Katia, García-Hernández, D A, Holtzman, Jon, Jönsson, Henrik, Shetrone, Matthew, Smith, Verne V, Sobeck, Jennifer S, Stringfellow, Guy S, Zamora, Olga, Beers, Timothy C, Fernández-Trincado, J G, Frinchaboy, Peter M, Hearty, Fred R, Nitschelm, Christian

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SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Hecht, Christian, Peters, Dethard, Friedrichs, Peter, Thomas, Bernd

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Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC von Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Azizi, Maral, Rommel, Mathias, Hecht, Christian, Friedrichs, Peter

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HCl assisted growth of thick 4H-SiC epilayers for bipolar devices: Poster presented at ICSCRM 2013, International Conference on Silicon Carbide and Related Materials, September 29... von Kallinger, Birgit, Ehlers, Christian, Berwian, Patrick, Rommel, Mathias, Friedrich, Jochen

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