Growth and optical properties of nanometer-scale GaAs and InAs whiskers von Hiruma, K., Yazawa, M., Katsuyama, T., Ogawa, K., Haraguchi, K., Koguchi, M., Kakibayashi, H.

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A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devices von Shichi, H., Osabe, S., Sugaya, M., Ino, T., Kakibayashi, H., Kanehori, K., Mitsui, Y.

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Electrical and structural properties of dislocations confined in a InGaAs/GaAs heterostructure von UCHIDA, Y, KAKIBAYASHI, H, GOTO, S

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Quantum size microcrystals grown using organometallic vapor phase epitaxy von HIRUMA, K, KATSUYAMA, T, OGAWA, K, KOGUCHI, M, KAKIBAYASHI, H, MORGAN, G. P

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Characterization of Solid-State Reaction of Barium Carbonate and Titanium Dioxide by Spatially Resolved Electron Energy Loss Spectroscopy von Matsumoto, Hiroaki, Kakibayashi, Hiroshi, Taniguchi, Yoshihumi, Cheng, I-Kuan, Lee, Ting-Tai, Hu, Ching-Li, Lee, Chun-Te, Fujimoto, Masayuki

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Three-dimensional STEM for observing nanostructures von Koguchi, M, Kakibayashi, H, Tsuneta, R, Yamaoka, M, Niino, T, Tanaka, N, Kase, K, Iwaki, M

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Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells von Tsuchiya, T., Komori, M., Tsuneta, R., Kakibayashi, H.

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Microstructure and magnetic properties of CoCr thin films formed on Ge layer von Futamoto, M., Honda, Y., Kakibayashi, H., Yoshida, K.

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GaAs free-standing quantum-size wires von HIRUMA, K, YAZAWA, M, HARAGUCHI, K, OGAWA, K, KATSUYAMA, T, KOGUGHI, M, KAKIBAYASHI, H

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Crystalline and electronic energy structure of OMVPE-grown AlGaInP/GaAs von Kondow, M., Kakibayashi, H., Minagawa, S., Inoue, Y., Nishino, T., Hamakawa, Y.

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Uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20°C von TANAKA, T, YANAGISAWA, H, KAKIBAYASHI, H, MINAGAWA, S, KAJIMURA, T

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Characterization of hetero-epitaxial PZT capacitor von Suga, M., Hiratani, M., Okazaki, C., Koguchi, M., Kakbayashi, H.

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Optical characterization of GaAs quantum wire microcrystals von Morgan, G.P., Ogawa, K., Hiruma, K., Kakibayashi, H., Katsuyama, T.

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New electron microscopy for composition analysis of GaAs/AlxGa1−xAs heterointerfaces von Kakibayashi, H., Nagata, F.

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Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces von Goto, S., Kakibayashi, H., Kawata, M., Usagawa, T.

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Microarea analysis of iron and phosphorus by resonance photoionization sputtered neutral mass spectrometry von Shichi, H., Osabe, S., Sugaya, M., Kanehori, K., Kakibayashi, H., Mitsui, Y.

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Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation von Nakamura, Kuniyasu, Kakibayashi, Hiroshi, Kanehori, Keiichi, Tanaka, Nobuo

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Developments of new concept analytical instruments for failure analyses of sub-100 nm devices von Mitsui, Yasuhiro, Yano, Fumiko, Kakibayashi, Hiroshi, Shichi, Hiroyasu, Aoyama, Takashi

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Crystal structure change of GaAs and InAs whiskers from zinc-blende to wurtzite type von KOGUCHI, M, KAKIBAYASHI, H, YAZAWA, M, HIRUMA, K, KATSUYAMA, T

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A sliding wafer-OMVPE scheme for fabricating subnanometer superlattices von MINAGAWA, S, SATOH, S, NAKATSUKA, S, KAKIBAYASHI, H

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