AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing von Kai, Cuihong, Wang, Yue, Liu, Xiaoping, Liu, Xiao, Zhang, Xuqing, Pi, Xiaodong, Yang, Deren

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Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing von Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing

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Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps von Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing

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The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition von Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Jia, Yuping, Liu, Henan, Wang, Yong, Wu, You, Kai, Cuihong, Li, Dabing

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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field von Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Wu, You, Kai, Cuihong, Wang, Yong, Luo, Xuguang, Feng, Zhe Chuan, Li, Dabing

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Origination and evolution of point defects in AlN film annealed at high temperature von Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lü, Wei, Sun, Xiaojuan, Li, Dabing

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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM von Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing

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Photogated Synaptic Transistors Based on the Heterostructure of 4H-SiC and Organic Semiconductors for Neuromorphic Ultraviolet Vision von Liu, Xiao, Huang, Wen, Kai, Cuihong, Yin, Lei, Wang, Yue, Liu, Xiaoping, Pi, Xiaodong, Yang, Deren

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In situ fabrication of Al surface plasmon nanoparticles by metal–organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors von Wu, You, Sun, Xiaojuan, Shi, Zhiming, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Kai, Cuihong, Wang, Yong, Lü, Wei, Li, Dabing

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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy von Kai, CuiHong, Sun, XiaoJuan, Jia, YuPing, Shi, ZhiMing, Jiang, Ke, Ben, JianWei, Wu, You, Wang, Yong, Liu, HeNan, Li, XiaoHang, Li, DaBing

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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy von Kai, CuiHong, Sun, XiaoJuan, Jia, YuPing, Shi, ZhiMing, Jiang, Ke, Ben, JianWei, Wu, You, Wang, Yong, Liu, HeNan, Li, XiaoHang, Li, DaBing

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fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors von Wu, You, Sun, Xiaojuan, Shi, Zhiming, Jia, Yuping, Jiang, Ke, Ben, Jianwei, Kai, Cuihong, Wang, Yong, Lü, Wei, Li, Dabing

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Preparation method of enhanced AlGaN/GaN-based HEMT device von WANG WENBO, KAI CUIHONG, ZOU PENGHUI

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Threshold value adjusting type GaN device and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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Enhanced AlGaN/GaN-based HEMT device and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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P-type and N-type integrated GaN HEMT device and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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GaN FinFET device and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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Semiconductor structure containing III-group nitride and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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III-nitride epitaxial layer structure and preparation method thereof von MO JIONGJIONG, YU FAXIN, KAI CUIHONG

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Optoelectronic neurosynaptic device, corresponding preparation method and working method von YANG DEREN, KAI CUIHONG, PI XIAODONG

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