Defect profiling in FEFET Si:HfO2 layers von O'Sullivan, B. J., Putcha, V., Izmailov, R., Afanas'ev, V., Simoen, E., Jung, T., Higashi, Y., Degraeve, R., Truijen, B., Kaczer, B., Ronchi, N., McMitchell, S., Banerjee, K., Clima, S., Breuil, L., Van den Bosch, G., Linten, D., Van Houdt, J.

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Investigation of Imprint in FE-HfO₂ and Its Recovery von Higashi, Y., Kaczer, B., Verhulst, A. S., O'Sullivan, B. J., Ronchi, N., McMitchell, S. R. C., Banerjee, K., Piazza, L. Di, Suzuki, M., Linten, D., Van Houdt, J.

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First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2 von Alam, Md Nur K, Clima, S., O'Sullivan, B. J., Kaczer, B., Pourtois, G., Heyns, M., Van Houdt, J.

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Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters von Diaz-Fortuny, J., Saraza-Canflanca, P., Lofrano, M., Bury, E., Degraeve, R., Kaczer, B.

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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF von Saraza-Canflanca, P., Fodor, F., Diaz-Fortuny, J., Gierlichs, B., Degraeve, R., Kaczer, B., Verbauwhede, I., Bury, E.

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Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs von Grasser, T., Kaczer, B.

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Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study von Vandemaele, M., Kaczer, B., Tyaginov, S., Franco, J., Bury, E., Chasin, A., Makarov, A., Hellings, G., Groeseneken, G.

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Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics von Xiang, Y., Bardon, M. Garcia, Kaczer, B., Alam, Md Nur K., Ragnarsson, L.-A., Kaczmarek, K., Parvais, B., Groeseneken, G., Van Houdt, J.

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Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI von Kaczer, B, Roussel, Ph J, Grasser, T, Groeseneken, G

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Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO₂-Based Ferroelectric FET von Higashi, Y., Ronchi, N., Kaczer, B., Alam, Md Nur K., O'Sullivan, B. J., Banerjee, K., McMitchell, S. R. C., Breuil, L., Walke, A., Van den Bosch, G., Linten, D., Van Houdt, J.

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Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions von Franco, J., Arimura, H., de Marneffe, J.-F., Brus, S., Ritzenthaler, R., Croes, K., Kaczer, B., Horiguchi, Naoto

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis von Asanovski, R., Arimura, H., de Marneffe, J.-F., Palestri, P., Horiguchi, N., Kaczer, B., Selmi, L., Franco, J.

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A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices von Buscemi, F., Piccinini, E., Vandelli, L., Nardi, F., Padovani, A., Kaczer, B., Garbin, D., Clima, S., Degraeve, R., Kar, G. S., Tavanti, F., Slassi, A., Calzolari, A., Larcher, L.

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High- k dielectrics for future generation memory devices (Invited Paper) von Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

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Variability in Planar FeFETs-Channel Percolation Impact von Kaczmarek, K., Bardon, M. Garcia, Xiang, Y., Ronchi, N., Ragnarsson, L.-A., Celano, U., Banerjee, K., Kaczer, B., Groeseneken, G., Houdt, J. Van

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory von Popovici, M., Swerts, J., Redolfi, A., Kaczer, B., Aoulaiche, M., Radu, I., Clima, S., Everaert, J.-L., Van Elshocht, S., Jurczak, M.

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Superior NBTI in High- k SiGe Transistors–Part I: Experimental von Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T.

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Junctionless versus inversion-mode lateral semiconductor nanowire transistors von Veloso, A, Matagne, P, Simoen, E, Kaczer, B, Eneman, G, Mertens, H, Yakimets, D, Parvais, B, Mocuta, D

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The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability von Grasser, T, Reisinger, H, Wagner, P, Schanovsky, F, Goes, W, Kaczer, B

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors von Illarionov, Yu. Yu, Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T.

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