Low-frequency Raman scattering from Si/Ge nanocrystals in different matrixes caused by acoustic phonon quantization von Mankad, Venu, Gupta, Sanjeev K., Jha, Prafulla K., Ovsyuk, N. N., Kachurin, G. A.

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Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals von Kachurin, G A, Cherkova, S G, Marin, D V, Yankov, R A, Deutschmann, M

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Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers von Kachurin, G.A., Cherkova, S.G., Marin, D.V., Kesler, V.G., Volodin, V.A., Skuratov, V.A.

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Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions von Kachurin, G. A., Cherkova, S. G., Marin, D. V., Cherkov, A. G., Skuratov, V. A.

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Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals von Kachurin, G. A., Cherkova, S. G., Volodin, V. A., Marin, D. M., Tetel’baum, D. I., Becker, H.

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Light particle irradiation effects in Si nanocrystals von Kachurin, G.A., Ruault, M.-O., Gutakovsky, A.K., Kaı̈tasov, O., Yanovskaya, S.G., Zhuravlev, K.S., Bernas, H.

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Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2 von Kachurin, G. A., Cherkova, S. G., Marin, D. V., Misiuk, A., Yanovitskaya, Z. S., Jedrzejewsky, J., Balberg, I.

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Features of the formation of silicon nanocrystals upon the annealing of SiO2 layers implanted with Si ions von Ovsyuk, N. N., Mankad, Venu, Gupta, Sanjeev K., Jha, Prafulla K., Kachurin, G. A.

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Synthesis and Optical Manifestation of NiO-Silica Nanocomposite von Chakrabarty, S., Chatterjee, K.

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Effect of external electric field on photoluminescence of silicon nanocrystals von Vandyshev, E N, Kachurin, G A, Zhuravlev, K S

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals von Kachurin, G.A, Cherkova, S.G, Volodin, V.A, Kesler, V.G, Gutakovsky, A.K, Cherkov, A.G, Bublikov, A.V, Tetelbaum, D.I

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals von Kachurin, G. A., Cherkova, S. G., Marin, D. V., Gutakovskiĭ, A. K., Cherkov, A. G., Volodin, V. A.

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Stacking Fault Energy of Si Nanocrystals Embedded in SiO2 von Wang, Y. Q., Liang, W. S., Ross, G. G.

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Development of Quantum Simulator for Emerging Nanoelectronics Devices von Hien, Dinh Sy

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XPS study of ion-beam-assisted formation of Si nanostructures in thin SiO2 layers von Kesler, V. G., Yanovskaya, S. G., Kachurin, G. A., Leier, A. F., Logvinsky, L. M.

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Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing von Kachurin, G.A., Tyschenko, I.E., Zhuravlev, K.S., Pazdnikov, N.A., Volodin, V.A., Gutakovsky, A.K., Leier, A.F., Skorupa, W., Yankov, R.A.

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The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation von Tetelbaum, D.I., Trushin, S.A., Mikhaylov, A.N., Vasil'ev, V.K., Kachurin, G.A., Yanovskaya, S.G., Gaponova, D.M.

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The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments von Kachurin, G. A., Volodin, V. A., Tetel’baum, D. I., Marin, D. V., Leier, A. F., Gutakovskii, A. K., Cherkov, A. G., Mikhailov, A. N.

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The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers von Kachurin, G. A., Yanovskaya, S. G., Tetelbaum, D. I., Mikhailov, A. N.

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Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain of electronic states von Efremov, M. D., Kamaev, G. N., Volodin, V. A., Arzhannikova, S. A., Kachurin, G. A., Cherkova, S. G., Kretinin, A. V., Malyutina-Bronskaya, V. V., Marin, D. V.

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