Recent progress of GaN power devices for automotive applications von Kachi, Tetsu

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Premarket safety population size associated with approval of expedited program drugs and orphan drugs von Illoh, Kachi

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Impact ionization coefficients and critical electric field in GaN von Maeda, Takuya, Narita, Tetsuo, Yamada, Shinji, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

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Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate von Horita, Masahiro, Narita, Tetsuo, Kachi, Tetsu, Suda, Jun

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Full and partial ordered number partitioning: Recurrence relations and their analogy to rhythmic pattern variety von Cohen, Michael, Kachi, Yasuyuki

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Progress on and challenges of p-type formation for GaN power devices von Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

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Predication and truthmaking: an improvement on the essentialist approach to truthmaking von Kachi, Daisuke

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Sea surface temperature from the new Japanese geostationary meteorological Himawari‐8 satellite von Kurihara, Yukio, Murakami, Hiroshi, Kachi, Misako

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Global Precipitation Map Using Satellite-Borne Microwave Radiometers by the GSMaP Project: Production and Validation von Kubota, T., Shige, S., Hashizume, H., Aonashi, K., Takahashi, N., Seto, S., Takayabu, Y.N., Ushio, T., Nakagawa, K., Iwanami, K., Kachi, M., Okamoto, K.

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A hybrid model for efficient decision-making in self-adaptive systems von Kachi, Fatma, Bouanaka, Chafia

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Simulation of channeled implantation of magnesium ions in gallium nitride von Nishimura, Tomoaki, Kachi, Tetsu

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Prevalence and Associated Factors of Psychological Distress Among Single Fathers in Japan von Dhungel, Bibha, Kato, Tsuguhiko, Kachi, Yuko, Ochi, Manami, Gilmour, Stuart, Takehara, Kenji

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Leakage mechanisms in GaN-on-GaN vertical pn diodes von Rackauskas, B., Dalcanale, S., Uren, M. J., Kachi, T., Kuball, M.

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Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers von Kato, Masashi, Asada, Takato, Maeda, Takuto, Ito, Kenji, Tomita, Kazuyoshi, Narita, Tetsuo, Kachi, Tetsu

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Socio-Economic Disparities in Early Childhood Education Enrollment: Japanese Population-Based Study von Kachi, Yuko, Kato, Tsuguhiko, Kawachi, Ichiro

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The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate von Narita, Tetsuo, Tokuda, Yutaka, Kogiso, Tatsuya, Tomita, Kazuyoshi, Kachi, Tetsu

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The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE von Narita, Tetsuo, Tomita, Kazuyoshi, Tokuda, Yutaka, Kogiso, Tatsuya, Horita, Masahiro, Kachi, Tetsu

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Cross-Calibration of the Himawari-9 Thermal Infrared Data by Applying a Physical Sea Surface Temperature Method von Kurihara, Yukio, Kachi, Misako

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis von Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

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Mg-implanted bevel edge termination structure for GaN power device applications von Matys, Maciej, Ishida, Takashi, Nam, Kyung Pil, Sakurai, Hideki, Narita, Tetsuo, Uesugi, Tsutomu, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

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