A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN von V. O. Zozulia, O. V. Botsula, K. H. Prykhodko

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Features of impact ionization occuring in semiconductor compaunds InGaN and InAlN von Prykhodko, K. H., Botsula, O V., Zozulia, V. O.

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Impact ionization effect on the generation of nitride-based diodes von O. V. Botsula, K. H. Prykhodko

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Effect of TiB2 particles on microstructure and crystallographic texture of Al-12Si fabricated by selective laser melting von Xi, L., Wang, P., Prashanth, K.G., Li, H., Prykhodko, H.V., Scudino, S., Kaban, I.

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Polymer EVA-OH membrane with improved water/gas separation performance: Influence of VAc/VOH repeating units ratio on membrane physical chemical properties von Prykhodko, Y., Martin, A., Oulyadi, H., Marais, S., Fatyeyeva, K.

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Imidazolium-based protic ionic liquids with perfluorinated anions: Influence of chemical structure on thermal properties von Prykhodko, Y., Martin, A., Oulyadi, H., Kobzar, Ya. L., Marais, S., Fatyeyeva, K.

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