Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon von T. Tan, Yoshikazu Furuta, K. Durrani, Toshio Kamiya, Haroon Ahmed, Haroon Ahmed, Kenji Taniguchi, Kenji Taniguchi

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Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor von Kamiya, T., Nakahata, K., Tan, Y. T., Durrani, Z. A. K., Shimizu, I.

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Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices von Kamiya, Toshio, Durrani, Zahid A. K., Ahmed, Haroon, Sameshima, Toshiyuki, Furuta, Yoshikazu, Mizuta, Hiroshi, Lloyd, Neil

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Single-electron charging in nanocrystalline silicon point-contacts von Durrani, Z.A.K, Kamiya, T, Tan, Y.T, Ahmed, H, Lloyd, N

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Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films von Tan, Y. T., Kamiya, T., Durrani, Z. A. K., Ahmed, H.

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Nanosilicon for single-electron devices von Mizuta, H, Furuta, Y, Kamiya, T, Tan, Y.T, Durrani, Z.A.K, Amakawa, S, Nakazato, K, Ahmed, H

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