Heteroepitaxy on compliant substrates: relaxation of misfit stress at low critical film thickness von Kastner, G

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Surface quality and laser-damage behaviour of chemo-mechanically polished CaF2 single crystals characterized by scanning electron microscopy von JOHANSEN, H, KÄSTNER, G

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Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas von KÄSTNER, G, BREITENSTEIN, O, SCHOLZ, R, REICHE, M

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Microstructure and microwave surface resistance of typical YBaCuO thin films on sapphire and LaAlO3 von Kästner, G, Schäfer, C, Senz, St, Kaiser, T, Hein, M A, Lorenz, M, Hochmuth, H, Hesse, D

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A model of strain relaxation in hetero-epitaxial films on compliant substrates von KÄSTNER, G, GÖSELE, U, TAN, T. Y

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Characterizing the convective heat transfer on stator ventilation ducts for large hydro generators with a neural network von Schrittwieser, M, Bíró, O, Farnleitner, E, Kastner, G

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Microstructure defects in YBCO thin films: A TEM study to discuss their influence on device properties von Kästner, G., Hesse, D., Scholz, R., Koch, H., Ludwig, F., Lorenz, M., Kittel, H.

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Twin to tweed transition in YBa2Cu3O7-δ by substitution of Al for Cu von LACAYO, G, KÄSTNER, G, HERRMANN, R

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Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire von SENZ, S, KOPPERSCHMIDT, P, KÄSTNER, G, HESSE, D

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Principles of strain relaxation in heteroepitaxial films growing on compliant substrates von Kästner, G., Gösele, U.

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Reduced critical thickness for relaxing heteroepitaxial films on compliant substrates von Kästner, G., Gösele, U.

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Mechanisms of visual attention in the human cortex von KASTNER, S, UNGERLEIDER, L. G

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Silicon wafer bonding via designed monolayers von Gösele, Ulrich, Steinnkirchner, Johann, Martini, Torsten, Reiche, Manfred, Kästner, Gerhard

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Passivation of Inline Wet Chemically Polished Surfaces for Industrial PERC Devices von Schwab, C., Wolf, A., Graf, M., Nekarda, J., Kästner, G., Zimmer, M., Kühnhold, S., Hofmann, M., Biro, D., Preu, R.

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Approximations to the Systematic Many-Beam Case of High-Energy Electron Diffraction. I. Transition from Two-Beam to Many-Beam Interaction von Kästner, G.

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Fundamental issues in wafer bonding von Gösele, U., Bluhm, Y., Kästner, G., Kopperschmidt, P., Kräuter, G., Scholz, R., Schumacher, A., Senz, St, Tong, Q.-Y., Huang, L.-J., Chao, Y.-L., Lee, T. H.

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Tweed structure in YBa2Cu3O7-δ induced by reduction of the oxygen content von Lacayo, G., Kästner, G.

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A comparison of differential equations that control transmission of strained, non-centrosymmetric crystals by fast electrons von Kästner, G.

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Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres von KÄSTNER, G, AKATSU, T, SENZ, S, PLÖSSL, A, GÖSELE, U

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Materials integration of gallium arsenide and silicon by wafer bonding von Kopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M.

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