Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion von JURAEV, Khimmatali, KHAJIEV, Mardonbek, KUTLIMRATOV, Aleksandr, AKHMEDOV, Abdumirkhakim, SAIDOV, Dilmurad

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Influence of Defects on Low Temperature Diffusion of Boron in SiC von Atabaev, Ilkham G., Saliev, Tojiddin M., Saidov, Dilmurad, Pak, Vadim A., Juraev, Khimmatali, Tin, Chin-Che, Atabaev, Bakhtiyar G., Giryansky, Vyacheslav N.

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Nonequilibrium Diffusion of Boron in SiC at Low Temperatures von Atabaev, Iikham G., Saliev, Tojiddin M., Bakhranov, Erkin N., Saidov, Dilmurad, Juraev, Khimmatali, Tin, Chin C., Adedeji, Victor, Atabaev, Bakhtiyar G., Saidkhanova, Nilufar G.

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