Characterization and field emission of sulfur-doped boron nitride synthesized by plasma-assisted chemical vapor deposition von SUGINO, T, TANIOKA, K, KAWASAKI, S, SHIRAFUJI, J

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Electron emission from boron nitride coated Si field emitters von Sugino, Takashi, Kawasaki, Seiji, Tanioka, Kazuhiko, Shirafuji, Junji

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Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction von HATTORI, R, SHIRAFUJI, J

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A new type of tunnel-effect transistor employing internal field emission of Schottky barrier junction von HATTORI, R, NAKAE, A, SHIRAFUJI, J

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Frequency-Dependent Conductivity in Polycrystalline Chemical Vapor Deposited Diamond Films von Muto, Yasuaki, Sugino, Takashi, Kobashi, Koji, Junji Shirafuji, Junji Shirafuji

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Electrical properties of diamond surfaces von Shirafuji, Junji, Sugino, Takashi

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Field emission from phosphorus-doped polycrystalline diamond films von Sugino, Takashi, Kuriyama, Kenji, Kimura, Chiharu, Yokota, Yuuko, Kawasaki, Seiji, Shirafuji, Junji

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Effect of phosphine on plasma-induced traps in n-InP von NINOMIYA, H, SUGINO, T, MATSUDA, K, SHIRAFUJI, J

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Capture cross section of electric-stress-induced interface states in (100) Si metal/oxide/semiconductor capacitors von INOUE, M, SHIMADA, A, SHIRAFUJI, J

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Hydrogenation of InP by phosphine plasma von SUGINO, T, YAMAMOTO, H, SHIRAFUJI, J

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Schottky barrier height of phosphidized InGaAs von SUGINO, T, SAKAMOTO, Y, SHIRAFUJI, J

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Oxide-voltage and its polarity dependence of interface-state-generation efficiency in (100) n-Si metal/oxide/semiconductor capacitors von INOUE, M, SHIMADA, A, SHIRAFUJI, J

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Room Temperature Ultraviolet Electroluminescence from Evaporated Poly(dimethylsilane) Film von Reiji Hattori, Reiji Hattori, Takeshi Sugano, Takeshi Sugano, Junji Shirafuji, Junji Shirafuji, Tsuyoshi Fujiki, Tsuyoshi Fujiki

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Measurement of surface Fermi level in phosphidized GaAs von SUGINO, T, YAMADA, T, KONDO, K, NINOMIYA, H, MATSUDA, K, SHIRAFUJI, J

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Interface state generation in p-type Si metal/oxide/semiconductor capacitors due to Fowler-Nordheim tunneling current stress von INOUE, M, SHIRAFUJI, J

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Barrier heights of Schottky junctions on n-InP treated with phosphine plasma von SUGINO, T, SAKAMOTO, Y, SUMIGUCHI, T, NOMOTO, K, SHIRAFUJI, J

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Effects of Phosphine-Plasma Treatment on Characteristics of Au/n-InP Schottky Junctions von Sugino, Takashi, Yamamoto, Hiroyuki, Sakamoto, Yoshifumi, Hideaki Ninomiya, Hideaki Ninomiya, Junji Shirafuji, Junji Shirafuji

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Effect of hydrogen plasma treatment on n-InP surfaces von SAKAMOTO, Y, SUGINO, T, NINOMIYA, H, MATSUDA, K, SHIRAFUJI, J

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Electron emission characteristics of metal/diamond field emitters von Sugino, Takashi, Iwasaki, Yukio, Kawasaki, Seiji, Hattori, Reiji, Shirafuji, Junji

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Epitaxial growth of poly(dimethylsilane) evaporated films on poly(tetrafluoroethylene) layer von HATTORI, R, AOKI, Y, SUGANO, T, SHIRAFUJI, J, FUJIKI, T

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