Demonstration of Complementary Ternary Graphene Field-Effect Transistors von Kim, Yun Ji, Kim, So-Young, Noh, Jinwoo, Shim, Chang Hoo, Jung, Ukjin, Lee, Sang Kyung, Chang, Kyoung Eun, Cho, Chunhum, Lee, Byoung Hun

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A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors von Kim, Yun Ji, Lee, Young Gon, Jung, Ukjin, Lee, Sangchul, Lee, Sang Kyung, Lee, Byoung Hun

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Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors von Ukjin Jung, Yun Ji Kim, Yonghun Kim, Young Gon Lee, Byoung Hun Lee

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Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress von Kim, Yonghun, Kang, Soo Cheol, Lee, Sang Kyung, Jung, Ukjin, Kim, Seung Mo, Lee, Byoung Hun

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Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene von Goo Kang, Chang, Kyung Lee, Sang, Jin Yoo, Tae, Park, Woojin, Jung, Ukjin, Ahn, Jinho, Hun Lee, Byoung

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Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method von Jung, Ukjin, Gon Lee, Young, Goo Kang, Chang, Lee, Sangchul, Hun Lee, Byoung

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Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys von Jin Ju Kim, Minwoo Kim, Ukjin Jung, Kyung Eun Chang, Sangkyung Lee, Yonghun Kim, Young Gon Lee, Rino Choi, Byoung Hun Lee

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Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers von Park, Woojin, Kim, Yonghun, Jung, Ukjin, Yang, Jin Ho, Cho, Chunhum, Kim, Yun Ji, Hasan, Syed Mohammad Najib, Kim, Hyun Gu, Lee, Han Bo Ram, Lee, Byoung Hun

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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry von Yonghun Kim, Young Gon Lee, Ukjin Jung, Jin Ju Kim, Minhyeok Choe, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park, Byoung Hun Lee

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Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs von Jin Ju Kim, Moonju Cho, Pantisano, L., Ukjin Jung, Young Gon Lee, Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Byoung Hun Lee

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Leakage current limit of time domain reflectometry in ultrathin dielectric characterization von Kim, Yonghun, Baek, Seung-heon Chris, Jeon, Changhoon, Lee, Young Gon, Kim, Jin Ju, Jung, Ukjin, Kang, Soo Cheol, Park, Woojin, Lee, Seok Hee, Lee, Byoung Hun

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Capacitance Analysis of Highly Leaky \hbox \hbox MIM Capacitors Using Time Domain Reflectometry von Yonghun Kim, Young Gon Lee, Minwoo Kim, Chang Goo Kang, Ukjin Jung, Jin Ju Kim, Seung Chul Song, Blatchford, J., Kirkpatrick, B., Niimi, H., Kwan Yong Lim, Byoung Hun Lee

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Graphene transfer in vacuum yielding a high quality graphene von Lee, Sangchul, Lee, Sang Kyung, Kang, Chang Goo, Cho, Chunhum, Lee, Young Gon, Jung, Ukjin, Lee, Byoung Hun

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Interface state degradation during AC positive bias temperature instability stress von Kang, Soo Cheol, Kim, Seung Mo, Jung, Ukjin, Kim, Yonghun, Park, Woojin, Lee, Byoung Hun

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Chemically induced Fermi level pinning effects of high-k dielectrics on graphene von Kim, So-Young, Kim, Yun Ji, Jung, Ukjin, Lee, Byoung Hun

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A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c4nr06397j von Kim, Yun Ji, Lee, Young Gon, Jung, Ukjin, Lee, Sangchul, Lee, Sang Kyung, Lee, Byoung Hun

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Quantitatively estimating defects in graphene devices using discharge current analysis method von Jung, Ukjin, Lee, Young Gon, Kang, Chang Goo, Lee, Sangchul, Kim, Jin Ju, Hwang, Hyeon June, Lim, Sung Kwan, Ham, Moon-Ho, Lee, Byoung Hun

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Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors von Gon Lee, Young, Ji Kim, Yun, Goo Kang, Chang, Cho, Chunhum, Lee, Sangchul, Jun Hwang, Hyeon, Jung, Ukjin, Hun Lee, Byoung

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Correlation between the hysteresis and the initial defect density of graphene von Cho, Chunhum, Gon Lee, Young, Jung, Ukjin, Goo Kang, Chang, Lim, Sungkwan, Jun Hwang, Hyeon, Choi, Hojun, Hun Lee, Byoung

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Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors von Jung, Ukjin, Gon Lee, Young, Ju Kim, Jin, Kyung Lee, Sang, Mejia, I., Salas-Villasenor, A., Quevedo-Lopez, Manuel, Hun Lee, Byoung

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