Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage von Michel, Ancy, I. V., Binola K. Jebalin, Franklin, S. Angen, Juliet Rani, Sylvia, A., Angelin Delighta, Nirmal, D.

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253 GHz f T Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications von Angen Franklin, S., I. V., Binola K. Jebalin, Chander, Subhash, Juliet Rani, Sylvia, Nirmal, D.

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