Selective Area Growth of GaN Nanowires on Graphene Nanodots von Morassi, Martina, Guan, Nan, Dubrovskii, Vladimir G, Berdnikov, Yury, Barbier, Camille, Mancini, Lorenzo, Largeau, Ludovic, Babichev, Andrey V, Kumaresan, Vishnuvarthan, Julien, Francois H, Travers, Laurent, Gogneau, Noëlle, Harmand, Jean-Christophe, Tchernycheva, Maria

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Color control of nanowire InGaN GaN light emitting diodes by post-growth treatment von Zhang, Hezhi, Jacopin, Gwénolé, Neplokh, Vladimir, Largeau, Ludovic, Julien, François H, Kryliouk, Olga, Tchernycheva, Maria

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Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires von Dai, Xing, Messanvi, Agnes, Zhang, Hezhi, Durand, Christophe, Eymery, Joël, Bougerol, Catherine, Julien, François H, Tchernycheva, Maria

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Green Electroluminescence from Radial m‑Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy von Kapoor, Akanksha, Guan, Nan, Vallo, Martin, Messanvi, Agnes, Mancini, Lorenzo, Gautier, Eric, Bougerol, Catherine, Gayral, Bruno, Julien, Francois H, Vurpillot, François, Rigutti, Lorenzo, Tchernycheva, Maria, Eymery, Joël, Durand, Christophe

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Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes von Neplokh, Vladimir, Messanvi, Agnes, Zhang, Hezhi, Julien, Francois H., Babichev, Andrey, Eymery, Joel, Durand, Christophe, Tchernycheva, Maria

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High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires von Jegenyes, Nikoletta, Morassi, Martina, Chrétien, Pascal, Travers, Laurent, Lu, Lu, Julien, Francois H, Tchernycheva, Maria, Houzé, Frédéric, Gogneau, Noelle

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Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires von Zhang, Hezhi, Dai, Xing, Guan, Nan, Messanvi, Agnes, Neplokh, Vladimir, Piazza, Valerio, Vallo, Martin, Bougerol, Catherine, Julien, François H, Babichev, Andrey, Cavassilas, Nicolas, Bescond, Marc, Michelini, Fabienne, Foldyna, Martin, Gautier, Eric, Durand, Christophe, Eymery, Joël, Tchernycheva, Maria

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Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors von Guan, Nan, Dai, Xing, Messanvi, Agnès, Zhang, Hezhi, Yan, Jianchang, Gautier, Eric, Bougerol, Catherine, Julien, François H, Durand, Christophe, Eymery, Joël, Tchernycheva, Maria

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Flexible inorganic light emitting diodes based on semiconductor nanowires von Guan, Nan, Dai, Xing, Babichev, Andrey V, Julien, François H, Tchernycheva, Maria

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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure von Zagonel, Luiz Fernando, Mazzucco, Stefano, Tencé, Marcel, March, Katia, Bernard, Romain, Laslier, Benoît, Jacopin, Gwénolé, Tchernycheva, Maria, Rigutti, Lorenzo, Julien, Francois H, Songmuang, Rudeesun, Kociak, Mathieu

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Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy von Saket, Omar, Wang, Junkang, Amador-Mendez, Nuño, Morassi, Martina, Kunti, Arup, Bayle, Fabien, Collin, Stéphane, Jollivet, Arnaud, Babichev, Andrey, Sodhi, Tanbir, Harmand, Jean-Christophe, Julien, François H, Gogneau, Noelle, Tchernycheva, Maria

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Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications von Saket, Omar, Himwas, Chalermchai, Piazza, Valerio, Bayle, Fabien, Cattoni, Andrea, Oehler, Fabrice, Patriarche, Gilles, Travers, Laurent, Collin, Stephane, Julien, Francois H., Harmand, Jean-Christophe, Tchernycheva, Maria

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Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects von Gogneau, Noelle, Chrétien, Pascal, Sodhi, Tanbir, Couraud, Laurent, Leroy, Laetitia, Travers, Laurent, Harmand, Jean-Chistophe, Julien, François H, Tchernycheva, Maria, Houzé, Frédéric

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Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111) von Piazza, Valerio, Vettori, Marco, Ahmed, Ahmed Ali, Lavenus, Pierre, Bayle, Fabien, Chauvin, Nicolas, Julien, François H, Regreny, Philippe, Patriarche, Gilles, Fave, Alain, Gendry, Michel, Tchernycheva, Maria

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InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection von Zhang, Hezhi, Messanvi, Agnès, Durand, Christophe, Eymery, Joël, Lavenus, Pierre, Babichev, Andrey, Julien, François H., Tchernycheva, Maria

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First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence von Pesach, Asaf, Sakr, Salam, Giraud, Etienne, Sorias, Ofir, Gal, Lior, Tchernycheva, Maria, Orenstein, Meir, Grandjean, Nicolas, Julien, Francois H, Bahir, Gad

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Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy von Morassi, Martina, Largeau, Ludovic, Oehler, Fabrice, Song, Hyun-Gyu, Travers, Laurent, Julien, François H, Harmand, Jean-Christophe, Cho, Yong-Hoon, Glas, Frank, Tchernycheva, Maria, Gogneau, Noëlle

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Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques von Piazza, Valerio, Babichev, Andrey V, Mancini, Lorenzo, Morassi, Martina, Quach, Patrick, Bayle, Fabien, Largeau, Ludovic, Julien, François H, Rale, Pierre, Collin, Stéphane, Harmand, Jean-Christophe, Gogneau, Noelle, Tchernycheva, Maria

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Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation von Guan, Nan, Babichev, Andrey, Foldyna, Martin, Denisov, Dmitry, Julien, François H, Tchernycheva, Maria

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Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells von Jacopin, Gwénolé, De Luna Bugallo, Andrés, Lavenus, Pierre, Rigutti, Lorenzo, Julien, Fran\{c}ois H, Zagonel, Luiz F, Kociak, Mathieu, Durand, Christophe, Salomon, Damien, Chen, Xiao Jun, Eymery, Joël, Tchernycheva, Maria

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