Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons von Mendes Martins, Maria, Kumar, Piyush, Woerle, Judith, Ni, Xiaojie, Grossner, Ulrike, Prokscha, Thomas

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Surface Morphology of 4H-SiC after Thermal Oxidation von Selberherr, Siegfried, Woerle, Judith, Grossner, Ulrike, Šimonka, Vito, Camarda, Massimo, Müller, Elisabeth, Hössinger, Andreas, Sigg, Hans, Weinbub, Josef

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Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces von Camarda, Massimo, Woerle, Judith, Souliere, Veronique, Ferro, Gabriel, Sigg, Hans, Grossner, Ulrike, Gobrecht, Jens

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Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface von Woerle, Judith, Prokscha, Thomas, Grossner, Ulrike

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4H-SiC Power VDMOSFET Manufacturing Utilizing POCl3 Post Oxidation Annealing von Woerle, Judith, Stark, Roger, Ju, Yanrui, Bouvet, Didier, Grossner, Ulrike

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Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique von Dorfer, Christian, Bathen, Marianne E., Race, Salvatore, Kumar, Piyush, Tsibizov, Alexander, Woerle, Judith, Grossner, Ulrike

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Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction von Ferro, Gabriel, Cauwet, François, Aslanidou, Sofia, Jousseaume, Yann, Grossner, Ulrike, Woerle, Judith, Godignon, Philippe, Rius, Gemma

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Sensitivity of Dit Extraction at the SiO2/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements von Kumar, Piyush, Woerle, Judith, Stark, Roger, Belanche Guadas, Manuel, Grossner, Ulrike

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Fast Defect Mapping at the SiO2/ SiC Interface Using Confocal Photoluminescence von Woerle, Judith, Johnson, Brett C., Stark, Roger, Camarda, Massimo, Grossner, Ulrike

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Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes von Belanche Guadas, Manuel, Guzenko, Luka, Für, Natalija, Grossner, Ulrike, Kumar, Piyush, Woerle, Judith, Bathen, Marianne Etzelmüller

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Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC von Woerle, Judith, Prokscha, Thomas, Hallén, Anders, Grossner, Ulrike

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Silicon carbide X‐ray beam position monitors for synchrotron applications von Nida, Selamnesh, Tsibizov, Alexander, Ziemann, Thomas, Woerle, Judith, Moesch, Andy, Schulze-Briese, Clemens, Pradervand, Claude, Tudisco, Salvatore, Sigg, Hans, Bunk, Oliver, Grossner, Ulrike, Camarda, Massimo

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Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons (Adv. Mater. Interfaces 21/2023) von Mendes Martins, Maria, Kumar, Piyush, Woerle, Judith, Ni, Xiaojie, Grossner, Ulrike, Prokscha, Thomas

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Investigation of the Si O 2 - Si C Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy von Kumar, Piyush, Martins, Maria Inês Mendes, Bathen, Marianne Etzelmüller, Woerle, Judith, Prokscha, Thomas, Grossner, Ulrike

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Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces von Alyabyeva, Natalia, Ding, Jacques, Sauty, Mylène, Woerle, Judith, Jousseaume, Yann, Ferro, Gabriel, McCallum, Jeffrey C., Peretti, Jacques, Johnson, Brett C., Rowe, Alistair C. H.

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Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology von Woerle, Judith, Lamontagne, Christopher, Belanche Guadas, Manuel, Bonafe, Filippo, Nipoti, Roberta, Negri, Marco, Grossner, Ulrike

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Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces von Alyabyeva, Natalia, Ding, Jacques, Sauty, Mylène, Woerle, Judith, Jousseaume, Yann, Ferro, Gabriel, McCallum, Jeffrey C., Peretti, Jacques, Johnson, Brett C., Rowe, Alistair C. H.

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Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy von Kumar, Piyush, Woerle, Judith, Bathen, Marianne Etzelmüller, Prokscha, Thomas, Martins, Maria Mendes, Grossner, Ulrike

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Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time von Woerle, Judith, Gorni, Marco, Camarda, Massimo, Parisini, Antonella, Boldrini, Virginia, Grossner, Ulrike, Canino, Maria, Vantaggio, Salvatore, Pizzochero, Giulio, Nipoti, Roberta

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Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC von Woerle, Judith, Bathen, Marianne Etzelmüller, Prokscha, Thomas, Galeckas, Augustinas, Ayedh, Hussein Mohammed Hussein, Vines, Lasse, Grossner, Ulrike

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