Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier von Jubadi, W.M., Packeer, F., Missous, M.

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Alternative Spin-On-Glass (SoG) material characterization For Deep-Submicron (<0.35 um) soft reflow fabrication process von Packeer, F, Zawawi, M A M, Hashim, N Z I, Noh, N M, Jubadi, W M, Missous, M

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Fabrication and characterization of tensile In sub(0.3)Al sub(0.7)As barrier and compressive In sub(0.7)Ga sub(0.3)As channel pHEMTs having extremely low gate leakage for low-noise... von Packeer, F, Isa, M M, Jubadi, WM, Ian, K W, Missous, M

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Design of AES S-box using combinational logic optimization von Ahmad, N, Hasan, R, Jubadi, W M

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Simulations of variable I-layer thickness effects on silicon PIN diode I-V characteristics von Jubadi, W M, Noor, S N M

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Comparison on I-V performances of Silicon PIN diode towards width variations von Shuhaimi, N I, Mohamad, M, Jubadi, W M, Tugiman, R, Zinal, N, Zin, R M

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Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications von Packeer, F, Mohamad Isa, M, Mat Jubadi, W, Ian, K W, Missous, M

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Fabrication and characterization of tensile In 0.3 Al 0.7 As barrier and compressive In 0.7 Ga 0.3 As channel pHEMTs having extremely low gate leakage for low-noise applications von Packeer, F, Mohamad Isa, M, Mat Jubadi, W, Ian, K W, Missous, M

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