Effect of the Phase Shift in a Periodic Anode on the Emission Spectra of Top-Emitting Organic Light-Emitting Diodes von Huang, J.J., Su, Y.K., Juang, F.S., Liu, Y.H., Chang, S.J.

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MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips von Ji, L.W., Chang, S.J., Fang, T.H., Young, S.J., Juang, F.S.

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Temperature dependence of electroluminescence in a tris-(8-hydroxy) quinoline aluminum (Alq/sub 3/) light emitting diode von Saha, S.K., Su, Y.K., Juang, F.S.

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The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents von Su, Y.K., Chen, W.R., Chang, S.J., Juang, F.S., Lan, W.H., Lin, A.C.H., Chang, H.

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Photo-enhanced native oxidation process for Hg/sub 0.8/Cd/sub 0.2/Te photoconductors von Chang, S.J., Su, Y.K., Juang, F.S., Lin, C.T., Chang Der Chiang, Ya-Tung Cherng

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Effects of different buffer layers in flexible organic light-emitting diodes von Tsai, Y.S., Juang, F.S., Yang, T.H., Yokoyama, M.C., Ji, L.W., Su, Y.K.

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Characterization of Cu doped CdSe thin films grown by vacuum evaporation von Ramaiah, K.Subba, Su, Y.K., Chang, S.J., Juang, F.S., Ohdaira, K., Shiraki, Y., Liu, H.P., Chen, I.G., Bhatnagar, A.K.

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Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique von Subba Ramaiah, K, Su, Y.K, Chang, S.J, Juang, F.S, Chen, C.H

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Growth and characterization of GaInNP grown on GaAs substrates von Hong, Y.G., Juang, F.S., Kim, M.H., Tu, C.W.

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Characterization and growth of Al0.065Ga0.935Sb by liquid phase epitaxy von CHEN, S. C, SU, Y. K, JUANG, F. S

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Liquid phase deposited SiO2 on GaN von WU, H. R, LEE, K. W, HO, C. H, CHIANG, C. I, CHERN, Y. T, JUANG, F. S, WEN, T. C, LEE, W. I, CHYI, J. I, NIAN, T. B, CHOU, D. W, HUANG WU, J. J, WANG, Y. H, HOUNG, M. P, SZE, P. W, SU, Y. K, CHANGE, S. J

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Single-crystal zincblende GaN grown on GaP (1 0 0) substrate by molecular beam epitaxy von Kim, Min-Ho, Juang, F.S., Hong, Y.G., Tu, C.W., Park, Seong-Ju

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Effect of composition and growth conditions on the properties of AlxGa1-xSb epilayers von SU, Y. K, CHEN, S. C, JUANG, F. S

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Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors von CHANG, S. J, SU, Y. K, JUANG, F. S, LIN, C. T, CHANG DER CHIANG, CHERNG, Y.-T

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Liquid phase deposited SiO 2 on GaN von Wu, H.R., Lee, K.W., Nian, T.B., Chou, D.W., Wu, J.J.Huang, Wang, Y.H., Houng, M.P., Sze, P.W., Su, Y.K., Chang, S.J., Ho, C.H., Chiang, C.I., Chern, Y.T., Juang, F.S., Wen, T.C., Lee, W.I., Chyi, J.I.

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Analysis of the dark current of focal-plane-array Hg 1− xCd xTe diode von Juang, F.S, Su, Y.K, Chang, S.M, Chang, S.J, Chiang, C.D, Cherng, Y.T

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Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode von JUANG, F. S, SU, Y. K, CHANG, S. M, CHANG, S. J, CHIANG, C. D, CHERNG, Y. T

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Relationship between solid and vapor phase compositions for In xGa 1− xSb epilayers grown by MOCVD von Juang, F.S., Su, Y.K., Wu, T.S.

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Characterization and growth of Al 0.065Ga 0.935Sb by liquid phase epitaxy von Chen, S.C., Su, Y.K., Juang, F.S.

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Effect of composition and growth conditions on the properties of Al xGa 1- xSb epilayers von Su, Y.K., Chen, S.C., Juang, F.S.

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