A GaN–SiC hybrid material for high-frequency and power electronics von Chen, Jr-Tai, Bergsten, Johan, Lu, Jun, Janzén, Erik, Thorsell, Mattias, Hultman, Lars, Rorsman, Niklas, Kordina, Olof

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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors von Chen, Ding-Yuan, Malmros, Anna, Thorsell, Mattias, Hjelmgren, Hans, Kordina, Olof, Chen, Jr-Tai, Rorsman, Niklas

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Polarity Control by Inversion Domain Suppression in N‑Polar III-Nitride Heterostructures von Zhang, Hengfang, Persson, Ingemar, Chen, Jr.-Tai, Papamichail, Alexis, Tran, Dat Q., Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

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Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure von Chen, Jr-Tai, Forsberg, Urban, Janzén, Erik

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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer von Gustafsson, Sebastian, Jr-Tai Chen, Bergsten, Johan, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas

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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors von Lu, Jun, Chen, Jr-Tai, Dahlqvist, Martin, Kabouche, Riad, Medjdoub, Farid, Rosen, Johanna, Kordina, Olof, Hultman, Lars

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures von Chen, Ding-Yuan, Wen, Kai-Hsin, Thorsell, Mattias, Lorenzini, Martino, Hjelmgren, Hans, Chen, Jr-Tai, Rorsman, Niklas

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Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs von Zhan, Gao, Rampazzo, Fabiana, Santi, Carlo De, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Blanck, Herve, Grunenputt, Jan, Sommer, Daniel, Chen, Ding Yuan, Wen, Kai-Hsin, Chen, Jr-Tai, Zanoni, Enrico

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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality von Zhang, Hengfang, Paskov, Plamen P., Kordina, Olof, Chen, Jr-Tai, Darakchieva, Vanya

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Observations of very fast electron traps at SiC/high-κ dielectric interfaces von Vidarsson, Arnar M., Persson, Axel R., Chen, Jr-Tai, Haasmann, Daniel, Hassan, Jawad Ul, Dimitrijev, Sima, Rorsman, Niklas, Darakchieva, Vanya, Sveinbjörnsson, Einar Ö.

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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect von Armakavicius, Nerijus, Chen, Jr-Tai, Hofmann, Tino, Knight, Sean, Kühne, Philipp, Nilsson, Daniel, Forsberg, Urban, Janzén, Erik, Darakchieva, Vanya

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Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization von Chen, Ding-Yuan, Persson, Axel R, Darakchieva, Vanya, Persson, Per O Å, Chen, Jr-Tai, Rorsman, Niklas

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On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC von Zhang, Hengfang, Persson, Ingemar, Papamichail, Alexis, Chen, -Tai, Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

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Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure von Chen, Jr-Tai, Persson, Ingemar, Nilsson, Daniel, Hsu, Chih-Wei, Palisaitis, Justinas, Forsberg, Urban, Persson, Per O. Å., Janzén, Erik

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Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface von Chen, Jr-Tai, Pomeroy, James W., Rorsman, Niklas, Xia, Chao, Virojanadara, Chariya, Forsberg, Urban, Kuball, Martin, Janzén, Erik

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Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization von Pomeroy, J., Rorsman, N., Jr-Tai Chen, Forsberg, U., Janzen, E., Kuball, M.

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Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure von Chen, Jr-Tai, Persson, Ingemar, Nilsson, Daniel, Hsu, Chih-Wei, Palisaitis, Justinas, Forsberg, Urban, Persson, Per O. Å., Janzén, Erik

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m -plane (101̱0) InN heteroepitaxied on (100)-γ-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy von Hsiao, Ching-Lien, Chen, Jr-Tai, Hsu, Hsu-Cheng, Liao, Ying-Chieh, Tseng, Po-Han, Chen, Yen-Ting, Feng, Zhe Chuan, Tu, Li-Wei, Chou, Mitch M. C., Chen, Li-Chyong, Chen, Kuei-Hsien

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Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns von Wei, Pai-Chun, Chattopadhyay, Surojit, Lin, Fang-Sheng, Hsu, Chih-Ming, Jou, Shyankay, Chen, Jr-Tai, Huang, Ping-Jung, Hsu, Hsu-Cheng, Shih, Han-Chang, Chen, Kuei-Hsien, Chen, Li-Chyong

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Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄) von Zhang, Hengfang, Chen, Jr.-Tai, Papamichail, Alexis, Persson, Ingemar, Tran, Dat Q., Paskov, Plamen P., Darakchieva, Vanya

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