Basic studies of molecular beam epitaxy—past, present and some future directions von Joyce, Bruce A, Joyce, Tim B

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Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices von Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., Chalker, P. R.

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Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy von Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., Chalker, P. R.

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In situ optical monitoring of layer composition in the chemical beam epitaxy of AlGaAs from amine-alane sources von JOYCE, T. B

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The microstructural influence of nitrogen incorporation in dilute nitride semiconductors von Chalker, P R, Bullough, T J, Gass, M, Thomas, S, Joyce, T B

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S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides von Mazzucato, S., Potter, R.J., Erol, A., Balkan, N., Chalker, P.R., Joyce, T.B., Bullough, T.J., Marie, X., Carrère, H., Bedel, E., Lacoste, G., Arnoult, A., Fontaine, C.

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Compositional variation in as-grown GaInNAs/GaAs quantum well structures von Chalker, P.R, Davock, H, Thomas, S, Joyce, T.B, Bullough, T.J, Potter, R.J, Balkan, N

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Di-Carbon Defects in Annealed Highly Carbon Doped GaAs von Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., Latham, C. D., Jones, R., Öberg, S.

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A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy von BEANLAND, R, AINDOW, M, JOYCE, T. B, KIDD, P, LOURENCO, M, GOODHEW, P. J

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Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs von Bullough, T.J., Davies, S., Thomas, S., Joyce, T.B., Chalker, P.R.

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Optical properties of GaInNAs/GaAs quantum wells von Mazzucato, S., Erol, A., Potter, R.J., Balkan, N., Chalker, P.R., Thomas, S., Joyce, T.B., Bullough, T.J.

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Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates von DAVIES, S, HUANG, T. S, MURRAY, R. T, GASS, M. H, PAPWORTH, A. J, JOYCE, T. B, CHALKER, P. R

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Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit von Thomas, S, White, S, Chalker, P R, Bullough, T J, Joyce, T B

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Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD von CHALKER, Paul R, MARSHALL, Paul A, POTTER, Richard J, JOYCE, Timothy B, JONES, Anthony C, TAYLOR, Stephen, NOAKES, Timothy C. Q, BAILEY, P

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Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well von White, S.L., Thomas, S., Joyce, T.B., Bullough, T.J., Chalker, P.R., Noakes, T.C.Q., Bailey, P., Mazzucato, S., Balkan, N.

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Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices von Chalker, P.R, Joyce, T.B, Johnston, C, Crossley, J.A.A, Huddlestone, J, Whitfield, M.D, Jackman, R.B

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Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy von Joyce, T.B, Farrell, T, Davidson, B.R

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Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100) von Chalker, P.R, Joyce, T.B, Farrell, T

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Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in   situ etching of GaAs using CBr4 von Joyce, T. B., Bullough, T. J., Farrell, T.

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Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy von Morrice, D.E., Farrell, T., Joyce, T.B., Chalker, P.R.

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