Resistance switching in HfO2 metal-insulator-metal devices von Gonon, P., Mougenot, M., Vallée, C., Jorel, C., Jousseaume, V., Grampeix, H., El Kamel, F.

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Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2 von BERNARD, Y, RENARD, V. T, GONON, P, JOUSSEAUME, V

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Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature von Jousseaume, V., Cuzzocrea, J., Bernier, N., Renard, V. T.

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Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures von Calka, P, Martinez, E, Delaye, V, Lafond, D, Audoit, G, Mariolle, D, Chevalier, N, Grampeix, H, Cagli, C, Jousseaume, V, Guedj, C

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Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors von Jousseaume, V., Yeromonahos, C., El Sabahy, J., Altemus, B., Ladner, C., Benedetto, K., Ollier, E., Faguet, J.

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Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes von Bernard, Y., Gonon, P., Jousseaume, V.

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material von Bertaud, T., Walczyk, D., Walczyk, Ch, Kubotsch, S., Sowinska, M., Schroeder, T., Wenger, Ch, Vallée, C., Gonon, P., Mannequin, C., Jousseaume, V., Grampeix, H.

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The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories von Souchier, E, D'Acapito, F, Noé, P, Blaise, P, Bernard, M, Jousseaume, V

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Corrigendum to “Filament assisted chemical vapor deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors” [Sens. Actuators: B Chem. 271 (2018) 271–279]... von Jousseaume, V., Yeromonahos, C., El Sabahy, J., Altemus, B., Ladner, C., Benedetto, K., Ollier, E., Faguet, J.

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Formation and Characterization of Filamentary Current Paths in HfO2-Based Resistive Switching Structures von PALUMBO, F, MIRANDA, E, GHIBAUDO, G, JOUSSEAUME, V

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Stress-induced leakage current and trap generation in HfO2 thin films von Mannequin, C, Gonon, P, Vallee, C, Latu-Romain, L, Bsiesy, A, Grampeix, H, Jousseaume, V

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Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory von Cabout, T., Buckley, J., Cagli, C., Jousseaume, V., Nodin, J.-F., de Salvo, B., Bocquet, M., Muller, Ch

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Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors von Haberfehlner, G., Bayle-Guillemaud, P., Audoit, G., Lafond, D., Morel, P. H., Jousseaume, V., Ernst, T., Bleuet, P.

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Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer von Morel, P. H., Haberfehlner, G., Lafond, D., Audoit, G., Jousseaume, V., Leroux, C., Fayolle-Lecocq, M., Baron, T., Ernst, T.

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a-SiC:H low- k deposition as copper diffusion barrier layer in advanced microelectronic interconnections von Charles-Alfred, C., Jousseaume, V.

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Accurate analysis of parasitic current overshoot during forming operation in RRAMs von Tirano, S., Perniola, L., Buckley, J., Cluzel, J., Jousseaume, V., Muller, Ch, Deleruyelle, D., De Salvo, B., Reimbold, G.

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Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories von d'Acapito, F., Souchier, E., Noé, P., Blaise, P., Bernard, M., Jousseaume, V.

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Preparation and characterization – including in situ Small Angle X-Ray Scattering – of gas chromatographic capillary columns with mesoporous silica thin films as stationary phases... von Lefebvre, D., Rayes, R. Sayah-El, Jousseaume, V., Maret, M., Veyre, L., Charleux, B., Thieuleux, C., Ricoul, F.

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications von Salaün, A., Grampeix, H., Buckley, J., Mannequin, C., Vallée, C., Gonon, P., Jeannot, S., Gaumer, C., Gros-Jean, M., Jousseaume, V.

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Porous ultra low k deposited by PECVD: From deposition to material properties von Jousseaume, V., Favennec, L., Zenasni, A., Gourhant, O.

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