In depth characterization of electron transport in 14 nm FD-SOI CMOS devices von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

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All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs von Karatsori, Theano A., Theodorou, Christoforos G., Josse, Emmanuel, Dimitriadis, Charalabos A., Ghibaudo, G.

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Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

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66‐1: High Resolution Quantum Dot Global Shutter Imagers von Steckel, Jonathan S., Pattantyus-Abraham, Andras G., Josse, Emmanuel, Mazaleyrat, Eric, Rochereau, Krysten

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Modeling local electrical fluctuations in 45nm heavily pocket-implanted bulk MOSFET von Mezzomo, Cecilia M., Bajolet, Aurelie, Cathignol, Augustin, Josse, Emmanuel, Ghibaudo, Gérard

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In depth characterization of electron transport in 14nm FD-SOI CMOS devices von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

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(Invited) 14nm FDSOI Technology for High-Speed and Energy-Efficient CMOS von Weber, Olivier, Josse, Emmanuel, Haond, Michel

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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

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Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

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Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices von Minju Shin, Ming Shi, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Mukhopadhyay, Sutirtha, Piot, Benjamin, Gyu-Tae Kim, Ghibaudo, Gerard

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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs von Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Mukhopadhyay, Sutirha, Piot, Benjamin, Kim, Gyu-Tae, Ghibaudo, Gérard

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Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET von Mezzomo, Cecilia M., Bajolet, Aurelie, Cathignol, Augustin, Josse, Emmanuel, Ghibaudo, Gérard

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(Invited) UTBB FDSOI PMOSFETs Including Strained SiGe Channels at the 14nm Technology Node and Beyond von Andrieu, François, Berthelon, Remy, Morvan, Simeon, Gourhant, Olivier, Baylac, Elise, Le Royer, Cyrille, Dutartre, Didier, Josse, Emmanuel, Haond, Michel

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ELECTRICAL CONNECTION AND ITS METHOD OF FABRICATION von JOSSE, Emmanuel, INARD, Alain

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Connexion électrique et son procédé de fabrication von JOSSE, Emmanuel, INARD, Alain

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IMAGING DEVICE von JOSSE, Emmanuel, MAZALEYRAT, Eric, STECKEL, Jonathan, RADID, Youness

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IMAGING DEVICE von JOSSE, Emmanuel, MAZALEYRAT, Eric, STECKEL, Jonathan, RADID, Youness

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PLANAR CELL NANOHEATER DESIGN AND CELL ARCHITECTURE FOR PROGRAMMABLE PHASE CHANGE FILTERS von JOSSE, Emmanuel, MONFRAY, Stephane, BARLAS, Marios, SHIIANOV, Kirill

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CELLULE INTEGREE MULTI-ORIENTATIONS, EN PARTICULIER CELLULE D'ENTREE/SORTIE D'UN CIRCUIT INTEGRE von DRAY ALEXANDRE, JOSSE EMMANUEL

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MULTI-ORIENTATION INTEGRATED CELL, IN PARTICULAR INPUT/OUTPUT CELL OF AN INTEGRATED CIRCUIT von Josse Emmanuel, Dray Alexandre

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