Bandwidth Enhancement With Low Group-Delay Variation for a 40-Gb/s Transimpedance Amplifier von Joohwa Kim, Buckwalter, James F

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A 40-Gb/s Optical Transceiver Front-End in 45 nm SOI CMOS von Joohwa Kim, Buckwalter, J. F.

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Staggered Gain for 100+ GHz Broadband Amplifiers von Joohwa Kim, Buckwalter, J F

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A Switchless, Q-Band Bidirectional Transceiver in 0.12-μm SiGe BiCMOS Technology von KIM, Joohwa, BUCKWALTER, James F

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A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology von Joohwa Kim, Buckwalter, J F

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Q -Band and W -Band Power Amplifiers in 45-nm CMOS SOI von Joohwa Kim, Dabag, H., Asbeck, P., Buckwalter, J. F.

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Cascaded Constructive Wave Amplification von Buckwalter, J.F., Joohwa Kim

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A 40-Gb/s optical transceiver front-end in 45nm SOI CMOS technology von Joohwa Kim, Buckwalter, J F

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A 77-GHz to 90-GHz bidirectional amplifier for half-duplex front-ends von Joohwa Kim, Parlak, Mehmet, Buckwalter, James F

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A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power von Dabag, H-T, Joohwa Kim, Larson, L. E., Buckwalter, J. F., Asbeck, P. M.

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A Switchless, Q-Band Bidirectional Transceiver in 0.12- \mum SiGe BiCMOS Technology von Joohwa Kim, Buckwalter, J. F.

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A fully-integrated optical duobinary transceiver in a 130nm SOI CMOS technology von Buckwalter, J. F., Joohwa Kim, Xuezhe Zheng, Guoliang Li, Raj, K., Krishnamoorthy, A.

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[Formula Omitted]-Band and [Formula Omitted]-Band Power Amplifiers in 45-nm CMOS SOI von Kim, Joohwa, Dabag, Hayg, Asbeck, Peter, Buckwalter, James F

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Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI: SPECIAL ISSUE ON POWER AMPLIFIERS von KIM, Joohwa, DABAG, Hayg, ASBECK, Peter, BUCKWALTER, James F

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A 1.1 THz Gain-Bandwidth W-Band Amplifier in a 0.12 \mu Silicon Germanium BiCMOS Process von Joohwa Kim, Buckwalter, J F

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A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process von Gupta, A. K., Joohwa Kim, Asbeck, P., Buckwalter, J. F.

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A DC-102GHz broadband amplifier in 0.12µm SiGe BiCMOS von Joohwa Kim, Buckwalter, J.F.

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A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe BiCMOS technology von Joohwa Kim, Buckwalter, J F

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A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs von Pornpromlikit, S., Dabag, H., Hanafi, B., Kim, J., Larson, L. E., Buckwalter, J. F., Asbeck, P. M.

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A 1.1 THz Gain-Bandwidth W -Band Amplifier in a 0.12 k rm m Silicon Germanium BiCMOS Process von Kim, Joohwa, Buckwalter, James F

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