Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6 von JONGSTE, J. F, OOSTERLAKEN, T. G. M, JANSSEN, G. C. A. M, RADELAAR, S

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Elastic constants and thermal expansion coefficient of metastable C49 TiSi2 von JONGSTE, J. F, LOOPSTRA, O. B, JANSSEN, G. C. A. M, RADELAAR, S

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High pressure aluminium for sub-micron vias using a liquid transducer von Jongste, J.F., Li, X., Lokker, J.P., Janssen, G.C.A.M., Radelaar, S.

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In situ X-ray diffraction study of the formation of TiSi2-C49 phase from Ti-Si multilayers on Si(100) von SARIEL, J, HAYDN CHEN, JONGSTE, J. F, RADELAAR, S

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Mechanical reliability of CVD-copper thin films von Jongste, J.F., Lokker, J.P., Janssen, G.C.A.M., Radelaar, S., Torres, J., Palleau, J.

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Stress in Al, AlSiCu, and AlVPd films on oxidized Si substrates von Leusink, G.J., Lokker, J.P., van den Homberg, M.J.C., Jongste, J.F., Oosterlaken, T.G.M., Janssen, G.C.A.M., Radelaar, S.

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Kinetics of the formation of C49 TiSi2 from Ti-Si multilayers as observed by in situ stress measurements von JONGSTE, J. F, ALKEMADE, P. F. A, JANSSEN, G. C. A. M, RADELAAR, S

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Influence of mixed reductants on the growth rate of WF6-based W-CVD von JONGSTE, J. F, OOSTERLAKEN, T. G. M, LEUSINK, G. J, VAN DER JEUGD, C. A, JANSSEN, G. C. A. M, RADELAAR, S

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The effect of doping atoms on the kinetics of self-limiting tungsten film growth on silicon by reduction of tungsten hexafluoride von VAN DER JEUGD, C. A, LEUSINK, G. J, OOSTERLAKEN, G. G. M, JONGSTE, J. F, JANSSEN, G. C. A. M, RADELAAR, S

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Stresses in sputtered Ti-Si multilayers and polycrystalline silicide films von WESSELS, P. J. J, JONGSTE, J. F, JANSSEN, G. C. A. M, MULDER, A. L, RADELAAR, S, LOOPSTRA, O. B

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Localized stress near and the thermal expansion of Al2Cu precipitates in an Al thin film matrix von Lokker, J. P., van der Pers, N. M., Verbruggen, A. H., Janssen, G. C. A. M., Jongste, J. F., Radelaar, S.

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Deformation mechanism in the forcefill process von Janssen, G. C. A. M., Jongste, J. F., Verbruggen, A. H.

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Loss of titanium during formation of self-aligned titanium silicide von Jongste, J.F., Prins, F.E., Janssen, G.C.A.M.

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Thin amorphous superconducting niobium-silicon films with high normal state resistivity von van der Zant, H.S.J., Jongste, J.F., Zandbergen, H.W., Mooij, J.E.

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Reactive ion etching of metal stack consisting of an aluminium alloy, WGex, barrier and Ti adhesion layer von Sabouret, E., Schaffnit, C., Jongste, J.F., Janssen, G.C.A.M., Radelaar, S.

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Formation of titanium disilicide during rapid thermal annealing, observed by in-situ stress measurements von Jongste, J.F., Janssen, G.C.A.M., Radelaar, S.

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Deformation of Si(100) wafers during rapid thermal annealing von Jongste, J. F., Oosterlaken, T. G. M., Bart, G. C. J., Janssen, G. C. A. M., Radelaar, S.

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The preparation of amorphous Ni-Zr powder by mechanical alloying von Weeber, A W, Meer, K van der, Bakker, H, Boer, F R de, Thijsse, B J, Jongste, J F

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The Role of the TiN Liner in Forcefill von Janssen, G. C. A. M.

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Modelling of the formation of TiSi2 in a nitrogen ambient von Jongste, J.F., Prins, F.E., Janssen, G.C.A.M., Radelaar, S.

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