Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations von Tercero, Jomar U., Isobe, Michiro, Karahashi, Kazuhiro, Hamaguchi, Satoshi

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Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar U., Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride von Tercero, Jomar U., Hirata, Akiko, Isobe, Michiro, Karahashi, Kazuhiro, Fukasawa, Masanaga, Hamaguchi, Satoshi

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Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study von Tercero, Jomar U., Isobe, Michiro, Karahashi, Kazuhiro, Vasquez, Magdaleno R., Hamaguchi, Satoshi

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Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study von Tercero, Jomar Unico, Hirata, Akiko, Isobe, Michiro, Fukasawa, Masagana, Vasquez, Magdaleno, Jr, Hamaguchi, Satoshi

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Effect of ammonium persulfate on the growth of MnO2 nanostructures prepared via hydrothermal synthesis for supercapacitor applications von Aquino, Christian Laurence E., Gorospe, Alloyssius E.G.B., Rezaga, Bethel Faith Y., Avila, Romar Angelo M., Macugay, Joshua Kae, Tercero, Jomar U., Balela, Mary Donnabelle L.

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Analysis of Hydrogen-induced Damage in SiN Atomic Layer Etching von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Iwamoto, Hayato, Jomar, Tercero, Isobe, Michiro, Ito, Tomoko, Karahashi, Kazuhiro, Hamaguchi, Satoshi

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SiN Atomic Layer EtchingのHダメージ解析 von 平田, 瑛子, 深沢, 正永, 釘宮, 克尚, 萩本, 賢哉, 岩元, 勇人, Tercero, Jomar, 礒部, 倫郎, 伊藤, 智子, 唐橋, 一浩, 浜口, 智志

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