Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions von Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, Andrei E, Nelson, Nicole N, Fahmi, M.M.E, Griffin, James A, Khan, Arif, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I

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Optical properties and defects in GaAsN and InGaAsN films and quantum well structures von Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S

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Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy von Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, Andrei E, Nelson, Nicole N, Fahmi, M.M.E, Griffin, James A, Khan, Arif, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S

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Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD von Ahoujja, M., Yeo, Y.K., Hengehold, R.L., Guido, L.J., Mitev, P., Johnstone, D.K., Kim, Y.H.

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Measurement of valence band edge discontinuity for the InAlAs/GaAsSb heterojunction lattice-matched to InP von Martinez, M.J., Scherer, R.L., Schuermeyer, F.L., Johnstone, D.K., Stutz, C.E., Evans, K.R.

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