Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys von Schaefer, Stephen T., Milosavljevic, Marko S., Kosireddy, Rajeev R., Johnson, Shane R.

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Impact of unintentional Sb in the tensile InAs layer of strain-balanced type-II InAs/InAsSb superlattices grown on GaSb by molecular beam epitaxy von Milosavljevic, Marko S., Webster, Preston T., Johnson, Shane R.

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Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates von Kosireddy, Rajeev R., Schaefer, Stephen T., Milosavljevic, Marko S., Johnson, Shane R.

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Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures von Fan, Dongsheng, Zeng, Zhaoquan, Hu, Xian, Dorogan, Vitaliy G., Li, Chen, Benamara, Mourad, Hawkridge, Michael E., Mazur, Yuriy I., Yu, Shui-Qing, Johnson, Shane R., Wang, Zhiming M., Salamo, Gregory J.

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Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy von Fan, Dongsheng, Zeng, Zhaoquan, Dorogan, Vitaliy G., Hirono, Yusuke, Li, Chen, Mazur, Yuriy I., Yu, Shui-Qing, Johnson, Shane R., Wang, Zhiming M., Salamo, Gregory J.

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Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi von Petluru, Priyanka, Grant, Perry C., Muhowski, Aaron J., Obermeier, Isabella M., Milosavljevic, Marko S., Johnson, Shane R., Wasserman, Daniel, Steenbergen, Elizabeth H., Webster, Preston T.

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Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices von Carrasco, Rigo A., Morath, Christian P., Grant, Perry C., Ariyawansa, Gamini, Stephenson, Chad A., Kadlec, Clark N., Hawkins, Samuel D., Klem, John F., Shaner, Eric A., Steenbergen, Elizabeth H., Schaefer, Stephen T., Johnson, Shane R., Webster, Preston T.

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Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy von Webster, Preston T., Shalindar, Arvind J., Schaefer, Stephen T., Johnson, Shane R.

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Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy von Carrasco, Rigo A., Morath, Christian P., Logan, Julie V., Woller, Kevin B., Grant, Perry C., Orozco, Haylie, Milosavljevic, Marko S., Johnson, Shane R., Balakrishnan, Ganesh, Webster, Preston T.

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Disorder and the Urbach edge in dilute bismide GaAsBi von Gogineni, Chaturvedi, Riordan, Nathaniel A., Johnson, Shane R., Lu, Xianfeng, Tiedje, Tom

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Evidence of two disorder scales in Ga(AsBi) von Imhof, Sebastian, Wagner, Christian, Chernikov, Alexej, Koch, Martin, Kolata, Kolja, Köster, Niko S., Chatterjee, Sangam, Koch, Stephan W., Lu, Xiangfeng, Johnson, Shane R., Beaton, Daniel A., Tiedje, Thomas, Rubel, Oleg, Thränhardt, Angela

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Clustering effects in Ga(AsBi) von Imhof, Sebastian, Thränhardt, Angela, Chernikov, Alexej, Koch, Martin, Köster, Niko S., Kolata, Kolja, Chatterjee, Sangam, Koch, Stephan W., Lu, Xianfeng, Johnson, Shane R., Beaton, Dan A., Tiedje, Thomas, Rubel, Oleg

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Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions von Shakfa, Mohammad Khaled, Chernikov, Alexey, Kalincev, Dimitri, Chatterjee, Sangam, Lu, Xianfeng, Johnson, Shane R., Beaton, Dan A., Tiedje, Thomas, Koch, Martin

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Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy von Kosireddy, Rajeev R., Schaefer, Stephen T., Shalindar, Arvind J., Webster, Preston T., Johnson, Shane R.

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A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy von Li, Hua, Liu, Shi, Cellek, Oray O., Ding, Ding, Shen, Xiao-Meng, Steenbergen, Elizabeth H., Fan, Jin, Lin, Zhiyuan, He, Zhao-Yu, Zhang, Qiang, Webster, Preston T., Johnson, Shane R., Ouyang, Lu, Smith, David J., Zhang, Yong-Hang

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Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs von Riordan, Nathaniel A., Gogineni, Chaturvedi, Johnson, Shane R., Lu, Xianfeng, Tiedje, Tom, Ding, Ding, Zhang, Yong-Hang, Fritz, Rafael, Kolata, Kolja, Chatterjee, Sangam, Volz, Kerstin, Koch, Stephan W.

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Photoluminescence studies of type-II CdSe/CdTe superlattices von Li, Jing-Jing, Yin, Leijun, Johnson, Shane R., Skromme, B. J., Wang, Shumin, Liu, Xinyu, Ding, Ding, Ning, Cun-Zheng, Furdyna, Jacek K., Zhang, Yong-Hang

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Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers von Hild, Konstanze, Sweeney, Stephen J., Marko, Igor P., Jin, Shirong R., Johnson, Shane R., Chaparro, Sergio A., Yu, Shuiqing, Zhang, Yong-Hang

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Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices von Webster, Preston T., Riordan, Nathaniel A., Gogineni, Chaturvedi, Liu, Shi, Lu, Jing, Zhao, Xin-Hao, Smith, David J., Zhang, Yong-Hang, Johnson, Shane R.

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Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy von Grant, Perry C., Fan, Dongsheng, Mosleh, Aboozar, Yu, Shui-Qing, Dorogan, Vitaliy G., Hawkridge, Michael E., Mazur, Yuriy I., Benamara, Mourad, Salamo, Gregory J., Johnson, Shane R.

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