Remote epitaxy through graphene enables two-dimensional material-based layer transfer von Kim, Yunjo, Cruz, Samuel S., Lee, Kyusang, Alawode, Babatunde O., Choi, Chanyeol, Song, Yi, Johnson, Jared M., Heidelberger, Christopher, Kong, Wei, Choi, Shinhyun, Qiao, Kuan, Almansouri, Ibraheem, Fitzgerald, Eugene A., Kong, Jing, Kolpak, Alexie M., Hwang, Jinwoo, Kim, Jeehwan

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Atomic scale mechanism of β to γ phase transformation in gallium oxide von Huang, Hsien-Lien, Johnson, Jared M., Chae, Christopher, Senckowski, Alexander, Wong, Man Hoi, Hwang, Jinwoo

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High current density 2D/3D MoS2/GaN Esaki tunnel diodes von Krishnamoorthy, Sriram, Lee, Edwin W., Lee, Choong Hee, Zhang, Yuewei, McCulloch, William D., Johnson, Jared M., Hwang, Jinwoo, Wu, Yiying, Rajan, Siddharth

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs von Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Interband tunneling for hole injection in III-nitride ultraviolet emitters von Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth

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Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy von Im, Soohyun, Chen, Zhen, Johnson, Jared M., Zhao, Pengyang, Yoo, Geun Hee, Park, Eun Soo, Wang, Yunzhi, Muller, David A., Hwang, Jinwoo

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Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy von Johnson, Jared M., Im, Soohyun, Windl, Wolfgang, Hwang, Jinwoo

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Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c‑Sapphire Substrates von Karim, Md Rezaul, Feng, Zixuan, Johnson, Jared M, Zhu, Menglin, Hwang, Jinwoo, Zhao, Hongping

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LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates von Rafique, Subrina, Karim, Md Rezaul, Johnson, Jared M., Hwang, Jinwoo, Zhao, Hongping

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MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping von Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Johnson, Jared M., Chen, Zhaoying, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

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Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 von Johnson, Jared M, Chen, Zhen, Varley, Joel B, Jackson, Christine M, Esmat Farzana, Zhang, Zeng, Arehart, Aaron R, Hsien-Lien Huang, Genc, Arda, Ringel, Steven A, Chris G. Van de Walle, Muller, David A, Hwang, Jinwoo

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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency von Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

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Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Sarker, Jith, Zhu, Menglin, Karim, Md Rezaul, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping

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Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates von Lee, Choong Hee, Krishnamoorthy, Sriram, O'Hara, Dante J., Brenner, Mark R., Johnson, Jared M., Jamison, John S., Myers, Roberto C., Kawakami, Roland K., Hwang, Jinwoo, Rajan, Siddharth

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Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 von Huang, Hsien-Lien, Chae, Christopher, Johnson, Jared M., Senckowski, Alexander, Sharma, Shivam, Singisetti, Uttam, Wong, Man Hoi, Hwang, Jinwoo

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Femtosecond Laser Heat Affected Zones in Aluminum von Gannon, Renae N., Blum, Thomas F., Johnson, Jared M.

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Dual Silicon Oxycarbide Accelerated Growth of Well‐Ordered Graphitic Networks for Electronic and Thermal Applications von Garman, Paul D., Johnson, Jared M., Talesara, Vishank, Yang, Hao, Du, Xinpeng, Pan, Junjie, Zhang, Dan, Yu, Jianfeng, Cabrera, Eusebio, Yen, Ying‐Chieh, Castro, Jose, Lu, Wu, Zhao, Ji‐Cheng, Hwang, Jinwoo, Lee, L. James

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Atomic scale investigation of chemical heterogeneity in β-(AlxGa1−x)2O3 films using atom probe tomography von Mazumder, Baishakhi, Sarker, Jith, Zhang, Yuewei, Johnson, Jared M., Zhu, Menglin, Rajan, Siddharth, Hwang, Jinwoo

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Molecular beam epitaxy of GaN on 2H–MoS2 von Lee, Choong Hee, Zhang, Yuewei, Johnson, Jared M., Koltun, Rachel, Gambin, Vincent, Jamison, John S., Myers, Roberto C., Hwang, Jinwoo, Rajan, Siddharth

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Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD von Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

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